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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface (1993)
    Springer
    Applied physics 57 (1993), S. 415-425 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.55 ; 82.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Epitaxial NiSi2 islands have been grown on Si(111) substrates by the direct reaction of nickel vapour with the silicon substrate in ultra-high vacuum at 400° C. Growth kinetics was shown to depend on the orientation of the islands: A-oriented islands grow about ten times faster than B-oriented ones, with the ratio of the advance rates of the main growth fronts even reaching 30. Applying plan-view transmission electron microscopy and high-resolution electron microscopy of cross sections, a corresponding difference was found in the structure of the NiSi2/Si(111) growth front: Steps at the B-oriented growth front were of three or six interplanar (111) spacings in height, whereas at the A-oriented growth front step-like defects of less than one interplanar (111) spacing in height were observed. These observations are explained by an atomic-scale model of the solid-state reaction, which involves the diffusion of nickel to the interfaces and the nucleation and subsequent lateral propagation of interfacial steps. The difference in the reaction kinetics originates from the presence of kinetic reaction barriers at the NiSi2/Si(111) growth fronts, the barrier at the B-front being higher owing to the lower formation rate of steps of triple atomic height than that of steps of lower height at the A-NiSi2/Si(111) growth front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331780
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A new synthetic layered silicate of type metal silicate hydrate (1991)
    Springer
    Colloid & polymer science 269 (1991), S. 1071-1073 
    Details
    ISSN: 1435-1536
    Keywords: Layer silicates ; crystallization ; organic template ; x-ray and HREM investigation ; layer structure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A new layered silicate has been synthesized in the quaternary system Na2O−SiO2−H2O-polymeric organic cation. The polymeric organic cation was intercalated into the silicate during crystallization. Composition, structure, and x-ray diffraction pattern of the new silicate do not fit with any known layered silicate [1–5]. Many similarities were found to hydrous alkali silicates (metal silicate hydrates, M-SH-type). The new silicate differs from M-SH by a high structural stability, against a wide range of different energetic influences. Due to the relatively high stability, high-resolution electron microscopy (HREM) can be applied to study the layer structure of this silicate as a representative of the M-SH silicates. All known M-SH, for example, magadiite and kenyaite are decomposed by the electronic beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00657439
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    Paper (German National Licenses)
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