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Metalorganic chemical vapor deposition of BaTiO3 thin films (1991)

Kwak, B. S. ; Zhang, K. ; Boyd, E. P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 767-772

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report the results of a recent study on the in situ deposition of single phase BaTiO3 thin films by using the metalorganic chemical vapor deposition technique. The effects of growth parameters on the characteristics of the thin films were investigated in the substrate temperature range of 550–800 °C. Barium β-diketonate and titanium isopropoxide were used as the metal sources. Growth rates ranging from submicron to several microns per hour have been deposited on various substrates in an inverted vertical warm-wall reactor. X-ray diffraction data and Rutherford backscattering spectra provided the evidence for single BaTiO3 phase. Scanning electron microscopy was used to study the surface and the cross-sectional morphology of the films. Dielectric constant of the as-deposited film was around 250 at room temperature. The resistivity of the films were greater than 109 Ω cm.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347362

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