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  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    High-performance diffusion disordered AlxGa1−xAs lasers via a self-aligned process and conventional open-tube annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2015-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Process conditions for fabricating Si-O impurity-induced layer disorder defined AlxGa1−xAs-GaAs buried heterostructure quantum well lasers utilizing a fully self-aligned planar process and conventional As free open-tube-furnace annealing are presented. An SiO2 layer, deposited by sputtering, was used as a diffusion source for Si and O impurities as well as a source for Ga vacancies that enhance impurity diffusion and allow for a reduction in the required annealing temperature and time. A self-aligned native oxide of the AlxGa1−xAs cladding layer was used to form a Zn diffusion mask and dielectric layer. Lasers fabricated using this process exhibited threshold currents as low as 2.72 mA and external differential quantum efficiencies of 79% at room temperature in continuous operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353142
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Wet thermal oxidation of AlxGa1−xAs compounds (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5503-5507 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented on the wet thermal oxidation of AlxGa1−xAs. The growth of wet thermal oxides of AlxGa1−xAs is shown to be linear with time. An O2 carrier gas was found to form a self-terminating oxide for compositions investigated (x(approximately-greater-than)0.4), but required elevated temperatures for substantial growth. The use of a medium oxygen concentration (∼20%) in a N2 carrier formed nonuniform oxides for all compositions investigated. A low O2 concentration (0.1%) in the N2 carrier was found to reduce the activation energy of the oxidation process for Al0.6Ga0.4As from 1.9 to 1.0 eV while increasing the activation energy of Al0.8Ga0.2As from 1.6 to 1.75 eV. For these wet thermal oxides it is observed that lateral oxidation at heterojunction interfaces is enhanced. This enhanced lateral oxidation can be attributed to local stress due to the smaller volume of the growing oxide compared to the volume of the consumed semiconductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357169
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Self-aligned native-oxide ridge-geometry AlxGa1−xAs-GaAs quantum well heterostructure laser arrays (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1776-1778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Process conditions for fabricating ridge geometry AlxGa1−xAs-GaAs quantum well heterostructure laser arrays utilizing a high quality self-aligned native oxide of AlxGa1−xAs are presented. Wet oxidation is performed, after etching ridges, via H2O vapor in a N2 or N2/H2(10%) carrier gas at 435–445 °C for 15–20 min. The formation of a uniform smooth oxide was found to be critically dependent on the crystal environment prior to the oxidation process. Characteristics of devices fabricated by this process are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107184
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Genetic differentiation of Texas Gulf Coast populations of the blue crab Callinectes sapidus (1993)
    Springer
    Marine biology 117 (1993), S. 227-233 
    Details
    ISSN: 1432-1793
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Allelic frequencies at three polymorphic, enzyme-encoding gene loci (GOT-2, EST-1, EST-2) were determined for Callinectes sapidus (Rathbun) megalopae and adults sampled along the Texas coast of the Gulf of Mexico. Significant temporal and spatial variation was observed at all three loci. Primary findings included: (1) megalopal allelic frequencies often differed significantly from those observed among neighboring adult populations; (2) larval allelic frequencies appeared to vary seasonally, with populations showing sharp differences in the summer months but tending to be more homogeneous in winter; (3) allelic frequencies among adult populations were significantly heterogeneous, but only one locus (EST-2) showed significant temporal variation; (4) juvenile and adult crabs sampled within one bay showed no size-specific differences in allelic frequencies. The spatial heterogeneity in allelic frequencies suggests that interpopulation gene flow is not sufficient to overcome population differentiation resulting from genetic drift and/or natural selection. Temporal variation in larval allelic frequencies suggests seasonal changes in larval source populations which may result from population differences in spawning season or developmental times or from seasonal changes in coastal current patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00345667
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    Paper (German National Licenses)
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