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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2015-2018 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Process conditions for fabricating Si-O impurity-induced layer disorder defined AlxGa1−xAs-GaAs buried heterostructure quantum well lasers utilizing a fully self-aligned planar process and conventional As free open-tube-furnace annealing are presented. An SiO2 layer, deposited by sputtering, was used as a diffusion source for Si and O impurities as well as a source for Ga vacancies that enhance impurity diffusion and allow for a reduction in the required annealing temperature and time. A self-aligned native oxide of the AlxGa1−xAs cladding layer was used to form a Zn diffusion mask and dielectric layer. Lasers fabricated using this process exhibited threshold currents as low as 2.72 mA and external differential quantum efficiencies of 79% at room temperature in continuous operation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1776-1778 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Process conditions for fabricating ridge geometry AlxGa1−xAs-GaAs quantum well heterostructure laser arrays utilizing a high quality self-aligned native oxide of AlxGa1−xAs are presented. Wet oxidation is performed, after etching ridges, via H2O vapor in a N2 or N2/H2(10%) carrier gas at 435–445 °C for 15–20 min. The formation of a uniform smooth oxide was found to be critically dependent on the crystal environment prior to the oxidation process. Characteristics of devices fabricated by this process are presented.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 74 (1989), S. 133-140 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The anisotropy of the upper critical field,H c2, was measured on deoxygenated single crystals of the Chevrel phase compound PbMo6S8. The superconducting transition temperature,T c, was determined with the applied field pointing in various directions in the hexagonal $$(2\overline 1 0)$$ plane. At a fixed value of the external field,T c is an oscillating function of direction. Since theH c2 versusT curve is linear in the field region we probed, the shape of the anisotropy inT c at constantH is the same as the anisotropy ofH c2 at constantT. The data reflect the low-temperature symmetry of the crystal structure. Two-fold symmetry was observed in the $$(2\overline 1 0)$$ plane. The data were fitted to the effective mass model with uniaxial symmetry. The anisotropy ofH c2 is more complex than that previously observed by us in Cu1.8Mo6S8. We relate this observation to the structural differences of these compounds.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 68 (1987), S. 109-123 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The Chevrel compounds Cu1.8Mo6S8−x O x have been studied, wherex=0.00, 0.05, and 0.10. In order to establish the effects of incorporating a small amount of oxygen into Cu1.8Mo6S8, we have measured lattice parameters, superconducting transition temperatureT c, and the temperature dependence of both the upper critical fieldH c2 and the magnetic susceptibility x. We show that the usual method of making this compound incorporates oxygen, and that this impurity may be removed by gettering the material with Y2S3. We observe that the substitution of oxygen for sulfur in Cu1.8Mo6S8 increasesT c and decreases the ratioc/a of the hexagonal lattice constants and x. A breakdown in the rigid-band approximation is indicated by a comparison of the relative signs of the effect onT c and that on x. In addition to these observations, we report on a correlation between hardness andT c of Cu1.8Mo6S8 and on the temperature dependence of the magnetic susceptibility of Cu3.2Mo6S8.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 73 (1988), S. 229-240 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The anisotropy of the upper critical field has been measured on deoxygenated single crystals of the Chevrel-phase Cu1.8Mo6S8. Data were taken with the applied magnetic field pointing in various directions in the hexagonal $$(2\overline 1 0)$$ and (001) planes. The data reflect the low-temperature, triclinic symmetry of the crystal structure. At each of a series of field values, oscillations in the superconducting transition temperature were observed. Since theH c2 versusT curve is linear in the field region probed, the shape of the anisotropy inT c at constantH is the same as the anisotropy of the upper critical fieldH c2 at constantT. Oscillations with pseudo-threefold symmetry have been observed for the first time in the (001) plane. The data are fitted with an expansion of spherical harmonics with triclinic symmetry.
    Type of Medium: Electronic Resource
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