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  • 1990-1994  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    High-purity vapor phase purification of C60 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is described which utilizes the difference in vapor pressure between C60 and heavier fullerenes to produce ultrahigh purity C60. Fullerene extract is introduced into one end of a distillation column with a series of evenly spaced perforated baffles inside. The extract is heated to 970 K under high vacuum, and a linear temperature gradient is established along the column. As the mixed fullerene vapor effuses down the column, it becomes enriched in the more volatile species. C60 with a purity of 99.97% has been obtained. This method shows promise in the purification of more exotic fullerene compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112380
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial integration of single crystal C60 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3443-3445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal thin films of (111) oriented C60 are grown on epitaxial layers of single crystal antimony. The C60/Sb epitaxy is confirmed by low-energy electron diffraction which indicates that the [11¯0] in-plane directions are parallel in the two layers. X-ray diffraction shows that the C60 film is entirely (111) oriented and of high quality with sharp Bragg peaks and narrow mosaic spread. In this study the Sb films were grown on GaSb, to which they are lattice matched; however, since Sb can be epitaxially grown on surfaces with a large lattice mismatch this technique may be applied to integrate C60 single crystals onto many substrates or devices with a surface having sixfold symmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110114
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Time-resolved reflectivity studies of the GaAs(100)/oxide and GaAs(100)/ZnSe interface (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1476-1478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of subpicosecond time-resolved reflectivity measurements on n-type GaAs(100) interfaces at photoexcitation densities of 1018 cm−3 is reported. It is observed that the temporal dependence of the reflectivity signal within the first several picoseconds following photoexcitation is highly dependent upon interface preparation. The surface of the GaAs was prepared in several ways: by the growth of a thermal oxide overlayer, a photochemically passivated oxide overlayer, and an epitaxial ZnSe overlayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105292
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion of silver in C60 thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2438-2440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of silver atoms into C60 solid thin films is observed. The diffusion process is significant at temperatures just above room temperature, with an activation energy of 2.5±0.5 eV (60 kcal/mol). Temperature dependent conductivity measurements indicate that silver atoms form an impurity band in solid C60 with an activation energy of 0.26 eV. The ready interdiffusion of silver and C60 may have important implications in the formation of C60/metal contacts or C60/metal layered structures or materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110471
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Excimer-laser-induced electric conductivity in thin-film C60 (1993)
    Springer
    Applied physics 57 (1993), S. 105-107 
    Details
    ISSN: 1432-0630
    Keywords: 73.61.Ph ; 78.66.Qn ; 81.40.Rs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical conductivity of thin-film C60 has been changed by more than seven orders of magnitude with KrF (248nm) excimer-laser irradiation. Specific conductivities of 1 Ω−1 · cm−1 have been obtained. The onset of conductivity is consistent with a laser-induced metal-insulator phase transition. The threshold for KrF-laser ablation of C60 has been determined to be 20±2 mJ/cm2. This laser-induced process generates an all-carbon semiconductor-metallic junction which may have important technological applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331226
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    Paper (German National Licenses)
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