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  • 1990-1994  (14)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4455-4457 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of geometric dimensions, such as the modulation length L, the central guide width W, and the gap G between the central guide and antiguide regions for the performance of the guide/antiguide intensity modulator have been examined. Both theoretical predictions and experimental measurements are reported here.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3952-3954 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation and properties of 120-K Tl-based high-temperature superconducting thin films on LaAlO3 substrates are reported. These films are obtained by post-annealing 2Tl: 2Ca: 2Ba: 3Cu: 10O precursor films at (approximately-equal-to)890 °C in a sealed quartz tube filled with (approximately-equal-to) 1-atm O2. Results of ac susceptibility measurements show a sharp drop in the real part of the susceptibility (χ') and a sharp maximum peak in the imaginary part of the susceptibility (χ‘) at a temperature close to the observed zero resistance Tc of (approximately-equal-to) 120 K. The broadening of the transition width in χ' and the decrease in the temperature where χ‘ maximum appears are found to occur at a slower rate with increasing ac field for these films than for the films deposited on Y-ZrO2 and MgO and having a similar zero resistance Tc. This weaker field dependence of χ' and χ‘ is shown to lead to a higher critical current density for the films deposited on LaAlO3 substrates. The higher critical current density is attributed to a stronger coupling between the grains arising from the absence of the formation of well-defined grain boundaries during film growth.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2211-2213 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an electric field induced-guide/antiguide optical intensity modulator which has a very wide optical bandwidth from 1 to 1.55 μm (ON/OFF ratio (approximately-greater-than) 13 dB from 1 to 1.55 μm for both TE and TM modes), which is the largest ever reported before for an intensity modulator. A TE mode ON/OFF ratio larger than 21 dB at 1.15 μm, and a propagation loss ∼1 dB at 1.3 μm has been measured. The electro-optic effects, along with carrier effects have been exploited to increase the refractive index under the guide and adjacent antiguide electrodes by applying reverse biases to them.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 114-116 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrically controllable optical waveguides have been created by using only the increase in refractive index from linear and quadratic electro-optic effects in GaAs/AlGaAs multiple quantum well substrates for the first time. Unlike conventional fixed waveguides, lateral guiding of this field-induced guide (FIG) can be turned on and off, so that the confinement factor, propagation constant, and net loss can be adjusted over wide ranges electrically. This special property plus a very simple fabrication process suggest that the FIG could be an important base technology for photonic integrated circuits.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2624-2626 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse mode emission characteristics of gain-guided surface emitting lasers at 0.85 μm were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 A(ring). Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3–1.55 μm devices.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1478-1480 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve layered structures were analyzed by x-ray reflectivity, before and after annealing at 240, 320, and 360 °C. Specularly reflected x-ray data were collected using a high-resolution reflectometer and were analyzed by least-squares refinement. The thicknesses of the individual layers in the NiFe/Cu/NiFe/FeMn magnetic sandwich remained essentially unchanged. With the exception of the FeMn/Ta interface, the widths of the buried interfaces increased rapidly with annealing temperature. The increase in widths at each of the NiFe/Cu and Cu/NiFe interfaces from 6.8 to 22.6 A(ring) caused a fivefold increase in the magnetically inactive layer in NiFe and a tenfold decrease in magnetoresistance. An increase in the total film thickness with annealing temperature was found to be caused by the surface oxidation of the Ta capping layer and the growth of a Ta silicide layer between the Ta buffer layer and the Si substrate.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1573-1575 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amount of intermixing at the interfaces of sputter-deposited spin-valve layered structures, comprising Si/Ta (50 A(ring))/NiFe (75 A(ring))/Cu (22.5 A(ring))/NiFe (50 A(ring))/FeMn (110 A(ring))/Ta (50 A(ring)), were obtained from least-squares refinement of x-ray reflectivity data. The observations were modeled by layers of nominal composition with compositional inhomogeneity at the interfaces. Layer thicknesses deduced from x-ray analysis were generally within a few percent of the nominal values. Interface widths between the two NiFe layers and the Cu spacer were 6.2-7.4 A(ring), indicating intermixing of atoms of about three monolayers at the interfaces. A 10.0-A(ring) interface width was found at the FeMn interface suggesting a mixed-phase layer of α- and γ-FeMn. Layer densities, except those of the less dense Ta underlayer and the oxidized Ta surface, agreed to within 10% of bulk values. The results were in agreement with those obtained from closely related Si/Ta/NiFe/Cu/NiFe/Ta, Si/Ta/NiFe/Cu/Ta, Si/Ta/NiFe/Ta, and Si/Ta films.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1353-1355 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of epitaxial CoxPt1−x films (x≈0.25 and 0.5) and the orientation relationships with sapphire (0001) single-crystal substrates were determined by grazing-incidence x-ray diffraction. The epitaxial relationships between the CoPt3 film and its substrate are CoPt3[11¯0](parallel)Al2O3[303¯0] and CoPt3(111)(parallel)Al2O3(0001). A significant amount of the ordered L12 phase was detected in CoPt3. The degree of long-range order in CoPt3 was 0.3, and the average domain size of the ordered phase was 80 A(ring). The CoPt film had two domains related by a 30° in-plane rotation. The epitaxial relationships between the CoPt film and its substrate were CoPt[100](parallel)Al2O3[303¯0] and CoPt(011)(parallel)Al2O3(0001) for domain A and CoPt[100](parallel)Al2O3[112¯0] and CoPt(011)(parallel)Al2O3(0001) for domain B. Domain A was found to be dominant and/or had a higher degree of long-range order than domain B.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 26 (1993), S. 774-777 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: An intensity enhancement obtained from asymmetric diffraction with a fixed incident angle α has been studied. Parallel-beam synchrotron radiation with λ = 1.54 Å (Stanford Synchrotron Radiation Laboratory) and λ = 1.53 Å (Photon Factory) was used to collect powder diffraction patterns of Si, CeO2 (α = 5 and 10°) and monoclinic ZrO2 (α = 10°). The synchrotron-radiation data were analyzed using single-reflection profile fitting and whole-powder-pattern fitting techniques. The integrated intensities in the asymmetric diffraction were compared with those of symmetric diffraction obtained by the conventional θ–2θ scanning technique. An intensity, after correction for a limited height of counter aperture, was enhanced by factors of 1.8 (α = 5°) and 1.7 (α = 10°) at the maximum in asymmetric diffraction and its magnitudes agreed well with those calculated from theory.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 26 (1993), S. 180-184 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Silver behenate, a possible low-angle diffraction standard, was characterized using the powder diffraction technique. Diffraction patterns obtained with 1.54 Å synchrotron and Cu Kα radiations showed thirteen regularly spaced (00l) peaks in the range 1.5–20.0°2θ. With the National Institute of Standards and Technology's standard reference material silicon as an internal standard, the long spacing of silver behenate was accurately determined from the profile-fitted synchrotron diffraction peaks, with d001 = 58.380 (3) Å. This result was in agreement with that obtained from the Cu Kα pattern. The profile widths of the silver behenate peaks were found to be consistently larger than those of the silicon peaks, indicating significant line broadening for silver behenate. The average crystallite size along the long-spacing direction of silver behenate was estimated using the Scherrer equation, giving Davg = 900 (50) Å. Because silver behenate has a large number of well defined diffraction peaks distributed evenly in the 1.5–20.0°2θ range, it is suitable for use as an angle-calibration standard for low-angle diffraction. However, care must be taken if silver behenate is to be used as a peak-profile calibration standard because of line broadening.
    Type of Medium: Electronic Resource
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