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  • 1990-1994  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 569-574 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subband effective mass and mobility of a two-dimensional electron gas in uniformly Si-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells are estimated. In three samples with well widths of 130, 200, and 300 A(ring) and a fixed barrier width of 68 A(ring), up to three two-dimensional subbands are found. Maximum enhancement of electron effective mass is 25% over the bulk value at a Fermi energy of 108 meV. These estimated effective masses are slightly smaller than previously reported values, and this is explained by recent theories which assume only nonparabolic correction. When the temperature ratio, (Dingle temperature)/(mobility temperature), is assumed to be identical in different subbands in each sample, the electron mobility of the first excited subband is at most twice that of the ground subband in the sample with the widest well. The effects of intersubband scattering and of screening on the subband mobilities are also discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5890-5892 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband absorption in In0.53Ga0.47As/In0.52Al0.48As multiquantum wells is investigated at temperatures ranging from 5 to 300 K. Two absorption peaks from the first to the second subband E21 and from the second to the third E32 are observed at 300 K. As temperature is reduced to 5 K the E32 peak disappears, while the E21 absorption intensity remains almost constant. This temperature dependence can be explained by a theoretical calculation of electron distribution in each subband.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5916-5920 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of an AlInAs/InP type-II superlattice are studied at room temperature. The photocurrent spectra have peaks that are attributable to excitons. An electroabsorption experiment confirms that the peaks are enhanced by applying an electric field. The change in absorption coefficient occurs at wavelengths of around 1 μm, where the linear absorption coefficient is small. Time-resolved photoluminescence shows the relaxation time is close to those in type-I superlattices.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1895-1897 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel structure superlattice avalanche photodiode is proposed. A p-InGaAs photoabsorption layer is separated from a nondoped InGaAs/InAlAs superlattice avalanche multiplication region. The electric field strength at the photoabsorption layer is controlled by a thin, highly doped p-InGaAs layer, which is sandwiched between the multiplication and photoabsorption layers. Devices with this structure were fabricated by molecular beam epitaxy. The external quantum efficiency is 73% at the multiplication factor of unity. The multiplication noise is quite small corresponding to an effective ionization rate ratio of 0.1. The maximum 3 dB bandwidth is 9.3 GHz.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 746-748 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a wavelength as short as 3.1 μm was obtained for the first time in uniformly Si-doped strained MQWs.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1427-1429 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Doping dependence of intersubband absorption in In0.53 Ga0.47 As/In0.52 Al0.48 As multiquantum wells (MQWs) grown by molecular beam epitaxy is investigated. The MQWs having a constant well width of 130 A(ring) are uniformly doped to a sheet carrier concentration of 4×1011–1×1013 cm−2. Above Ns =1.8×1012 cm−2, the intersubband absorption from the second to the third subband is observed, as well as from the first to the second, which agrees well with theoretical calculations.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1149-1151 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The well-width dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells grown by molecular beam epitaxy is investigated. The energies of the absorption peaks decrease from 300 to 100 meV with an increasing well width from 35 to 200 A(ring). This well-width dependence of the peak energy is in good agreement with theoretical calculations. For a wide quantum well, two sharp absorption peaks were observed, including the transitions from the second to the third subbands.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1122-1124 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation of the multiplied photocurrent at an intense illumination was studied for InGaAsP/InAlAs superlattice avalanche photodiodes. The dependence of the multiplication factor on the illumination intensity is small in comparison with conventional bulk APDs because the ionization rate ratio is larger. The multiplication factor decreases at an intense illumination mainly because of the space charge effect.
    Type of Medium: Electronic Resource
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