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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5916-5920 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of an AlInAs/InP type-II superlattice are studied at room temperature. The photocurrent spectra have peaks that are attributable to excitons. An electroabsorption experiment confirms that the peaks are enhanced by applying an electric field. The change in absorption coefficient occurs at wavelengths of around 1 μm, where the linear absorption coefficient is small. Time-resolved photoluminescence shows the relaxation time is close to those in type-I superlattices.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1713-1719 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm2, respectively. This result is achieved by the introduction of H2 into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ΔEc is estimated to be 0.43 of the band-gap difference ΔEg. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 °C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm2. cw operation is also achieved in the MQW laser diodes at −125 °C.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3262-3264 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Great improvement in the electrical and optical properties of molecular-beam-epitaxy-grown InAlAs was obtained by using InP buffer layers and high substrate temperatures of 555 °C. Undoped InAlAs layers are n type and the highest room temperature electron mobility is as high as 5100 cm2/V s with a carrier concentration of 1×1015 cm−3. The room-temperature photoluminescence spectrum has a sharp edge emission with a spectral half-width as narrow as 42 meV.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5890-5892 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband absorption in In0.53Ga0.47As/In0.52Al0.48As multiquantum wells is investigated at temperatures ranging from 5 to 300 K. Two absorption peaks from the first to the second subband E21 and from the second to the third E32 are observed at 300 K. As temperature is reduced to 5 K the E32 peak disappears, while the E21 absorption intensity remains almost constant. This temperature dependence can be explained by a theoretical calculation of electron distribution in each subband.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 569-574 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subband effective mass and mobility of a two-dimensional electron gas in uniformly Si-doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells are estimated. In three samples with well widths of 130, 200, and 300 A(ring) and a fixed barrier width of 68 A(ring), up to three two-dimensional subbands are found. Maximum enhancement of electron effective mass is 25% over the bulk value at a Fermi energy of 108 meV. These estimated effective masses are slightly smaller than previously reported values, and this is explained by recent theories which assume only nonparabolic correction. When the temperature ratio, (Dingle temperature)/(mobility temperature), is assumed to be identical in different subbands in each sample, the electron mobility of the first excited subband is at most twice that of the ground subband in the sample with the widest well. The effects of intersubband scattering and of screening on the subband mobilities are also discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5007-5011 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering from InGaAlP layers on (100) GaAs substrates grown by molecular-beam epitaxy (MBE) is studied. Compositional dependencies of Raman shifts show two-mode behavior for InAlP and partial three-mode behavior for InGaAlP. The empirical expressions for the compositional variations of LO and TO phonon frequencies are presented. Enhancement of the Raman peak intensities for AlP- and InP-like LO phonons is observed for the composition range when the direct band-gap E0 is close to the photon energy of the excitation light source. The ratio of valley depth to InP-like LO phonon peak height in the Raman spectrum of InGaP ranges from about 0.5 to 0.43, and correlates with the room-temperature photoluminescence peak energy (1.9–1.88 eV). The relationship between these is the same as for the metalorganic vapor-phase epitaxy (MOVPE) samples, although the depth-to-peak height ratios for the MBE samples coincide with the higher side values. The growth temperature dependence is also observed. These results indicate that the InGaP layers grown under the appropriate MBE-growth conditions show the ordered state, although the degree of the order is low. The InAlP layers show Raman spectra having well-resolved InP-like LO and TO phonon peaks. This differs from most of the reported results for MOVPE-grown InAlP layers, and suggests that the MBE-grown InAlP layers are very close to the disordered state alloy.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 985-986 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive indices of In0.49Ga0.51P, In0.49Al0.51P, and In0.49Ga0.29Al0.22P, lattice matched to GaAs grown by molecular-beam epitaxy, are determined from double-beam reflectance measurements for photon energies ranging from 0.6 to 1.3 eV. Variation of the In0.49Ga0.51−xAlxP, refractive index with Al composition x and photon energy is calculated according to the single-effective-oscillator model. These analytical results are then compared with experimental data.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1383-1385 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1895-1897 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel structure superlattice avalanche photodiode is proposed. A p-InGaAs photoabsorption layer is separated from a nondoped InGaAs/InAlAs superlattice avalanche multiplication region. The electric field strength at the photoabsorption layer is controlled by a thin, highly doped p-InGaAs layer, which is sandwiched between the multiplication and photoabsorption layers. Devices with this structure were fabricated by molecular beam epitaxy. The external quantum efficiency is 73% at the multiplication factor of unity. The multiplication noise is quite small corresponding to an effective ionization rate ratio of 0.1. The maximum 3 dB bandwidth is 9.3 GHz.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 746-748 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a wavelength as short as 3.1 μm was obtained for the first time in uniformly Si-doped strained MQWs.
    Type of Medium: Electronic Resource
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