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  • 1
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 557-560 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Light emitting diode with MOS structures containing multiple-stacked Si quantum dots(QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperaturewhen the negative gate bias exceeded the threshold voltage. The luminescence intensity wasincreased linearly with increasing the injected current density. The possible luminescencemechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDsand the improvement of EL intensity was demonstrated
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We have formed high density nanodots of nickel silicide (NiSi) on ultrathin SiO2 andcharacterized their electronic charged states by using an AFM/Kelvin probe technique. Siquantum dots (Si-QDs) with an areal dot density of ~2.5x1011cm-2 were self-assembled on~3.6nm-thick thermally-grown SiO2 by controlling the early stages of LPCVD using pure SiH4gas. Subsequently, electron beam evaporation of Ni was carried out as thin as ~1.7nm inequivalent thickness at room temperature and followed by 300ºC anneal for 5min in vacuum.XPS and AFM measurements confirm the formation of NiSi dots with an average dot height of~8nm. After removal of Ni residue on SiO2 by a dilute HCl solution, bias conditions requiredfor electron charging to NiSi dots were compared with those to pure Si-QDs dots and Ni dots.The surface potential changes stepwise with respect to the tip bias due to multistep electroninjection and extraction of NiSi nanodots. In addition, it is confirmed that charge retentioncharacteristics of NiSi dots are superior to those of Si-QDs with the almost same size
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5111-5117 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The procedure for analyzing the discrimination of fundamental peaks in x-ray-diffraction measurements of strained-layer superlattice (SLS) structures is generalized and refined for application to more complex structures, including both lattice-relaxed and coherently strained layers. Two criteria are proposed for investigating lattice relaxation and coherent deformation of relevant layers. A ZnCdSe/ZnSe SLS grown on a GaAs substrate with a ZnSe buffer layer is structurally analyzed by the generalized procedure with the two criteria, demonstrating its effectiveness in analyzing such complex structures. It is revealed from this analysis that the ZnSe buffer layer is almost totally lattice relaxed relative to the GaAs substrate and that the ZnCdSe/ZnSe SLS layer is coherently strained relative to the relaxed ZnSe buffer layer. Quantitative analysis with a kinematical step model also confirms the above results in terms of peak position and peak intensity profile. The full width at half-maximum of the SLS peaks in the experimental profiles, however, is much broader than that of the calculated profiles. Based on this difference, some consideration of the peak broadening mechanism is offered from the viewpoint of broadening symmetry, revealing that this analysis works as a simple checking method on the peak broadening mechanism.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3255-3262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyzed compositional fluctuation with lattice relaxation in a selectively grown InGaAsP epilayer by x-ray diffraction measurement. A simple and deterministic analysis procedure is described for analyzing the distribution of lattice constants (Δa⊥,Δa(parallel)). The method is based on the systematic analysis of hkl-dependence of x-ray peak profiles. The method makes the direct observation of the distribution of lattice constants easier and is suitable for analysis of selectively grown samples. The method is applicable to a selectively grown InGaAsP epilayer with a small strain under a dislocation-free condition. Clear lattice relaxation is experimentally confirmed in the epilayer and is identified as the elastic relaxation that is caused by the three-dimensional shape of the selectively grown region. This is a direct observation of elastic relaxation in a selectively grown dislocation-free structure by x-ray diffraction measurement. Distributions of both perpendicular and parallel lattice constants are estimated from the x-ray data. The result shows that both the composition and relaxation rate fluctuate in the sample. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1383-1385 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 34 (2001), S. 681-690 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A new method for analysing X-ray peak broadening caused by compositional fluctuation is proposed. The method is applicable to epitaxial layers with diamond or zinc-blende structure on (001) substrates. In the new method, a rescaling procedure with a difference variable ΔA is applied to measured X-ray profiles and the dependence of the profiles on various reflection indices hkl is analysed. The theoretical formula reveals that X-ray peak profiles become independent of hkl after the rescaling. A new criterion is proposed; an experimental examination based on the criterion makes it possible simply to judge whether or not X-ray peak broadening is caused by compositional fluctuation. The method is verified experimentally and demonstrated by applying it to an InGaAs multilayer sample having artificial compositional fluctuation.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1432-0851
    Keywords: Key words CD40 ; Metastases ; EGFR ; FAS ; ICAM-1
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract  Purpose: The poor prognosis associated with lung cancer is related to the high incidence of regional and distant metastasis. There is a crucial need to identify parameters that can predict a tendancy to metastatic spread to allow better prognostic evaluation and therapeutic approach. Methods: Using flow cytometry we evaluated 18 human lung cancer cell lines for the expression of different surface markers on lung cancers suggested to be possible prognostic parameters, including epidermal growth factor receptor (EGFR), intercellular adhesion molecule 1 (ICAM-1), Fas and CD40. Results: No correlation was found between tumor prognosis and EGFR, ICAM-1 or Fas. However, a statistically significant correlation was found between the surface expression of CD40 and the metastatic spread of the tumor. In this study, 14 of 18 lung cancer cell lines (78%) expressed CD40 on their surface. All of the 4 tumors that were CD40-negative, were stage I tumors, without any evidence of regional or distant metastasis. Of the 14 tumors that expressed CD40, all but 1 (93%) had either nodal or systemic metastasis at the time of diagnosis. Patients whose tumors were CD40-negative showed a significantly better N stage, overall stage at presentation and survival than those patients with CD40-positive patients. No significant differences between the two groups were observed in tumor size, gender, age, histology, differentiation or preoperative therapy. Conclusions: These results suggest that CD40 expression on lung cancer may play a role in metastatic spread, and also may serve as a prognostic marker and an indicator of advanced disease.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary The enantiomeric separation ability of unmodified and methylated cyclodextrins (CDs) during capillary zone electrophoresis (CZE) was investigated using twelve dansylamino acids. Unmodified β- and γ-CDs exhibited high enantioselectivities. α-CD could scarcely separate the enantiomers before and after dimethylation, but obtained enantioselectivity after trimethylation. On the other hand, dimethylation of β-CD removed much of its high enantioselectivity. Moreover, the chemical modifications produced a reverse in the migration order of the enantiomers. The inclusion of dansyl-DL-phenylalanine with CDs was evaluated using 600 MHz 1H NMR spectroscopy.
    Type of Medium: Electronic Resource
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