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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 204-208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion process of InGaAs/InP superlattice structures by thermal annealing of 700–850 °C is studied by Raman spectroscopy. Peak intensities and peak energies of InAs-, GaAs-, and InP-like longitudinal optical (LO) phonon modes change with thermal annealing temperature and time. Depth profiles of the group III and group V atoms are estimated quantitatively by measuring the variations of the peak energies of the LO phonon modes and the ratios of the mode intensities. The energy shift of the GaAs-like LO peak showing a small broadening, the existence of nonenergy shift InP LO phonon peak and the emerging of InP-like LO peak in the lower energy region indicate that the interdiffused superlattice consists of uniform compositional InGaAsP well and InP barrier layers and sharp interfaces. It is found that the resulting InGaAsP quaternary alloy is roughly lattice-matched to InP (〈±0.5%). It is also found that the diffusion coefficient in the well region is larger than that in the barrier region, and that the interdiffusion coefficient D0 and activation energy Ea are 8.56×1010 cm2/s and 5.82 eV, respectively. The interdiffusion in this superlattice is determined by the diffusion in the InP region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350310
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  • 2
    Electronic Resource
    Electronic Resource
    Evaluation of In1−xGaxAs/In1−yGayAs strained layer superlattice structures by x-ray diffraction measurements with a novel discrimination method of the fundamental peak (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1189-1195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a simple alternative procedure for evaluating the structure of InGaAs/InGaAs strained layer superlattices (SLSs) by x-ray diffraction measurements. A symmetric reflection configuration is adopted for the scanning mode of (hkl) reflection measurement contrasting to the commonly used asymmetric configuration for SLS. In order to determine the average lattice constants for the SLS under the scanning mode, an analytical formula is derived with respect to the symmetric reflection configuration. A new discrimination method of the fundamental peak is also proposed in which a simple experimental method is useful especially for the SLS case because the fundamental peak is usually not the most intense. This method works also as a simple criterion of coherent lattice deformation. The analytical procedure is applied to the evaluation of InGaAs/InGaAs SLS structures. The lattice deformation and composition of well and barrier layers are estimated by parameter fitting to the satellite peak intensity profile based on the obtained average lattice constant. The results reveal that the sample is coherently deformed as designed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351286
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray-diffraction analysis of complex structures in ZnCdSe/ZnSe strained-layer superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5111-5117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The procedure for analyzing the discrimination of fundamental peaks in x-ray-diffraction measurements of strained-layer superlattice (SLS) structures is generalized and refined for application to more complex structures, including both lattice-relaxed and coherently strained layers. Two criteria are proposed for investigating lattice relaxation and coherent deformation of relevant layers. A ZnCdSe/ZnSe SLS grown on a GaAs substrate with a ZnSe buffer layer is structurally analyzed by the generalized procedure with the two criteria, demonstrating its effectiveness in analyzing such complex structures. It is revealed from this analysis that the ZnSe buffer layer is almost totally lattice relaxed relative to the GaAs substrate and that the ZnCdSe/ZnSe SLS layer is coherently strained relative to the relaxed ZnSe buffer layer. Quantitative analysis with a kinematical step model also confirms the above results in terms of peak position and peak intensity profile. The full width at half-maximum of the SLS peaks in the experimental profiles, however, is much broader than that of the calculated profiles. Based on this difference, some consideration of the peak broadening mechanism is offered from the viewpoint of broadening symmetry, revealing that this analysis works as a simple checking method on the peak broadening mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357223
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  • 4
    Electronic Resource
    Electronic Resource
    Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1599-1607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation process in InAsP/InGaAsP strained-layer superlattices (SLSs) with interfacial misfit dislocations has been investigated systematically by transmission electron microscopy (TEM) and x-ray analyses. The TEM analysis reveals that dislocations locate a little inside the buffer layer near the interface between the buffer and first well layer in the SLS. The x-ray analysis of (400) azimuthal angle dependence indicates the buffer layer has a large macroscopic tilt. Using a curve fitting analysis of various (hkl) x-ray profiles and reciprocal lattice mapping measurements, residual strain was determined quantitatively, i.e., Δa(parallel) and Δa⊥, in the SLS and buffer layer. These results reveal that the dislocations mainly cause lattice distortion of the buffer layer rather than relaxation of the SLS layer. The most remarkable result is that the change of a(parallel) is not equal to that of a⊥ in the buffer layer. This phenomenon strongly suggests that microplastic domains are generated in the buffer layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365959
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  • 5
    Electronic Resource
    Electronic Resource
    Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1383-1385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However, resulting group III atom profiles are not completely uniform even after Zn diffusion. These results suggest that large lattice mismatch suppresses the intermixing process by Zn diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99123
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray diffraction analysis of a selectively grown InGaAsP epitaxial layer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3255-3262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyzed compositional fluctuation with lattice relaxation in a selectively grown InGaAsP epilayer by x-ray diffraction measurement. A simple and deterministic analysis procedure is described for analyzing the distribution of lattice constants (Δa⊥,Δa(parallel)). The method is based on the systematic analysis of hkl-dependence of x-ray peak profiles. The method makes the direct observation of the distribution of lattice constants easier and is suitable for analysis of selectively grown samples. The method is applicable to a selectively grown InGaAsP epilayer with a small strain under a dislocation-free condition. Clear lattice relaxation is experimentally confirmed in the epilayer and is identified as the elastic relaxation that is caused by the three-dimensional shape of the selectively grown region. This is a direct observation of elastic relaxation in a selectively grown dislocation-free structure by x-ray diffraction measurement. Distributions of both perpendicular and parallel lattice constants are estimated from the x-ray data. The result shows that both the composition and relaxation rate fluctuate in the sample. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396830
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  • 7
    Electronic Resource
    Electronic Resource
    Improvements of electrical and optical properties of InAlAs grown by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3262-3264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Great improvement in the electrical and optical properties of molecular-beam-epitaxy-grown InAlAs was obtained by using InP buffer layers and high substrate temperatures of 555 °C. Undoped InAlAs layers are n type and the highest room temperature electron mobility is as high as 5100 cm2/V s with a carrier concentration of 1×1015 cm−3. The room-temperature photoluminescence spectrum has a sharp edge emission with a spectral half-width as narrow as 42 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335785
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  • 8
    Electronic Resource
    Electronic Resource
    A new method for analysing peak broadening caused by compositional fluctuation in X-ray diffraction measurements (2001)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 34 (2001), S. 681-690 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A new method for analysing X-ray peak broadening caused by compositional fluctuation is proposed. The method is applicable to epitaxial layers with diamond or zinc-blende structure on (001) substrates. In the new method, a rescaling procedure with a difference variable ΔA is applied to measured X-ray profiles and the dependence of the profiles on various reflection indices hkl is analysed. The theoretical formula reveals that X-ray peak profiles become independent of hkl after the rescaling. A new criterion is proposed; an experimental examination based on the criterion makes it possible simply to judge whether or not X-ray peak broadening is caused by compositional fluctuation. The method is verified experimentally and demonstrated by applying it to an InGaAs multilayer sample having artificial compositional fluctuation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889801011347
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  • 9
    Electronic Resource
    Electronic Resource
    A new version of the method for analysing peak broadening caused by local tilt distribution in double-crystal X-ray diffraction measurements (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 1376-1385 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A new method of analysing X-ray peak broadening caused by local tilt distribution in mosaic structures is proposed for double-crystal X-ray diffraction measurements. In the new method, the dependence of whole peak profiles on various reflection indices hkl is analysed, whereas that of only the peak full width at half-maximum (FWHM) is analysed in a conventional broadening analysis. The theoretical formula tells us that not only the FWHM values but also the whole profiles become independent of hkl after rescaling the horizontal axis Δθ of measured patterns to Δθ/cosθc, where θc is the angle between the (001) and (hkl) planes. A new criterion is proposed to judge whether X-ray peak broadening is caused by the local tilt distribution or not; the advantage provided by the new criterion, using whole peak profiles, is high accuracy in making this judgment. It is experimentally verified that the hkl independence holds in terms of whole peak profiles. The advantage of the method is demonstrated experimentally by applying it to InAsP/InGaAsP strained layer superlattice samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889800012772
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  • 10
    Electronic Resource
    Electronic Resource
    A new version of the method for analysing peak broadening caused by local tilt distribution in double-crystal X-ray diffraction measurements. Erratum (2001)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 34 (2001), S. 87-87 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: As a result of a printer's error, Fig. 9 of the paper by Nakashima [J. Appl. Cryst. (2000), 33, 1376–1385] was incorrectly printed. The correct figure is given here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889800020203
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