Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 3255-3262
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We analyzed compositional fluctuation with lattice relaxation in a selectively grown InGaAsP epilayer by x-ray diffraction measurement. A simple and deterministic analysis procedure is described for analyzing the distribution of lattice constants (Δa⊥,Δa(parallel)). The method is based on the systematic analysis of hkl-dependence of x-ray peak profiles. The method makes the direct observation of the distribution of lattice constants easier and is suitable for analysis of selectively grown samples. The method is applicable to a selectively grown InGaAsP epilayer with a small strain under a dislocation-free condition. Clear lattice relaxation is experimentally confirmed in the epilayer and is identified as the elastic relaxation that is caused by the three-dimensional shape of the selectively grown region. This is a direct observation of elastic relaxation in a selectively grown dislocation-free structure by x-ray diffraction measurement. Distributions of both perpendicular and parallel lattice constants are estimated from the x-ray data. The result shows that both the composition and relaxation rate fluctuate in the sample. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1396830
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