Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (3)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1023-1028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epilayers of Cd1−xMnxTe grown on CdTe substrates by liquid-phase epitaxy (LPE) are characterized by x-ray, modulated (piezo- or photo-) reflectivity, and Raman spectroscopy. The epilayers are found to be of excellent structural quality, having sharp excitonic signatures in the reflectivity spectra and highly uniform Mn concentrations. Intentional introduction of In donors during LPE growth of Cd1−xMnxTe has been verified by spin-flip Raman signals which show large Raman shifts with a Brillouin function behavior characteristic of donors in diluted magnetic semiconductors. During the LPE growth we also encountered the formation of large-area, free-standing platelets of Cd1−xMnxTe. They have been similarly characterized with x-rays, as well as modulation and Raman spectroscopy.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1163-1165 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the epitaxial growth of Zn1−x CdxSe epilayers and ZnSe/Zn1−x CdxSe superlattices (0≤x≤1) on (100)GaAs. Although thick epilayers of Zn1−x CdxSe are prone to defect formation with increasing Cd content, the structural and optical characteristics improve remarkably when Zn1−x CdxSe is in the form of thin layers within ZnSe/Zn1−x CdxSe superlattices. High quality superlattices can be grown for x≤0.35. The characterization of these systems using transmission electron microscopy, x-ray diffraction, reflectivity, and photoluminescence is reported.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 7376-7384 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation processes of CH3SSCH3 at 248 and 193 nm and CH3SCH3 at 193 nm have been studied by translational spectroscopy. When excited at 248 nm, CH3SSCH3 undergoes a simple S–S bond scission to produce two CH3S fragments with an average translational energy of 33 kcal/mol. The angular distribution of the product with respect to the polarized laser is measured and fitted with an anisotropy parameter β=1.2. It indicates that the dissociation is a fast, direct process. At 193 nm, there is only a simple dissociation channel for CH3SCH3, while CH3SSCH3 undergoes a predominant C–S bond scission with the S–S bond scission as a minor channel. No angular dependence for the primary products from both CH3SCH3 and CH3SSCH3 has been observed. The observation of S+2 time-of-flight spectra shows that a major fraction of CH3S2, which is internally excited when produced, undergoes spontaneous dissociation to form slow S2 and CH3 radicals. Results obtained for the dissociation processes of both molecules at 193 nm are rationalized and comparisons with previous investigations [J. Chem. Phys. 92, 6587 (1990); 95, 5014 (1991)] are also included.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...