Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 1727-1729
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have deposited YBa2Cu3O7−δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101¯0) sapphire, and R-plane (11¯02) sapphire is buffered by CeO2. Rs values of 450–620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108411
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