ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract InP crystals, grown by the liquid-encapsulated Czochralski method, were prepared by rapid thermal annealing and were investigated by photoluminescence spectroscopy as a function of annealing time. In the photoluminescence spectra of as-grown samples, the 1.414 eV acceptor-bound peak and the 1.378 eV free-to-acceptor peak dominated. A shift toward higher energy was observed at high excitation intensity for the 1.375 eV peak of the donor-to-acceptor emission of InP. The dominant transition centred at the 1.378 eV peak can be ascribed to zinc impurities in the starting material. Changes in the excitation intensity and the sample temperature resulted in the identification of zinc-related free-to-acceptor transitions where the zinc ionization energy was calculated to be 46 meV. Analysis of the temperature-dependent data yield an activation energy of 47 meV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00541635
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