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  • 1990-1994  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Migration enhanced epitaxy growth of GaAs on Si with (GaAs)1−x (Si2)xGaAs strained layer superlattice buffer layers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 154-156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (GaAs)1−x(Si2)x/GaAs strained-layer superlattices (SLS) have been used as buffer layers to reduce the dislocation density in GaAs grown on Si by migration enhanced epitaxy (MEE). Double-crystal x-ray diffractograms of GaAs on Si grown using MEE with 3 packets of 5 period (GaAs)1−x(Si2)x/GaAs SLS buffer layers, exhibited a GaAs (004) peak full width at half maximum value of 150 arcsecs. The cross-sectional transmission electron microscopy investigations revealed extensive threading dislocation bending at each interface of (GaAs)1−x(Si2)x and GaAs, making the SLS highly efficient. The observed highly effective dislocation bending, we believe is due to a combined effect of built-in strain in the SLS and the relatively high elastic stiffness constant of (GaAs)1−x(Si2)x alloys. Plan-view transmission electron microscopy studies indicated dislocation densities 〈5×105 cm−2 at a distance of 0.2 μm from the surface of GaAs on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109355
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of GaAs on hydrogen-fluoride treated Si (100) surfaces using migration-enhanced epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1606-1608 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of GaAs has been successfully achieved for the first time using migration-enhanced epitaxy (300 °C) on HF treated Si substrates which have been subjected to an initial in situ pre-heat treatment in the range of 350–620 °C and without the customary high-temperature Si oxide desorption step. High quality GaAs on Si exhibiting double-crystal x-ray rocking curve full-width at half-maximum value of 280 arcsec was obtained by using two-step growth technique MEE(300 °C)/MBE (580 °C). Secondary-ion mass spectrometry studies indicated 0.05 (monolayer) ML of oxygen at the interface of GaAs and HF treated Si substrate. The photoluminescence spectra at 10 K for GaAs grown on HF treated Si substrates was dominated by sharp excitonic related peaks and no carbon acceptor related emission could be detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107240
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Orosomucoid typing of apes (family Pongidae) by isoelectric focusing: Among primates do only humans have two functional orosomucoid loci? (1991)
    Springer
    Biochemical genetics 29 (1991), S. 525-536 
    Details
    ISSN: 1573-4927
    Keywords: α1-acid glycoprotein ; apes ; gene duplication ; orosomucoid ; polymorphism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract It has been demonstrated that human orosomucoid (ORM) is controlled by more than one functional loci, whileMacaca ORM is controlled by one locus. To examine the time when the ORM gene was duplicated in the evolution of primates, plasma samples from 118 apes (family Pongidae) belonging to 4 genera and 12 species were investigated for ORM polymorphism using isoelectric focusing followed by immunoprinting. The band patterns of ORM in the subfamily Ponginae showed quantitatively different products as in humans. A pedigree study of common chimpanzees supported the two-locus model for ORM. Gibbons (subfamily Hylobatinae) displayed highly variable band patterns, but the number of loci was not determined unequivocally. Thus, this study shows that duplication of theORM gene in primates occurred either before or after the divergence of Hylobatinae and Ponginae, consistent with a previous prediction from the molecular evolutionary rate of ORM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02426868
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Orosomucoid typing of apes (family Pongidae) by isoelectric focusing: Among primates do only humans have two functional orosomucoid loci? (1991)
    Springer
    Biochemical genetics 29 (1991), S. 525-536 
    Details
    ISSN: 1573-4927
    Keywords: α1-acid glycoprotein ; apes ; gene duplication ; orosomucoid ; polymorphism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract It has been demonstrated that human orosomucoid (ORM) is controlled by more than one functional loci, whileMacaca ORM is controlled by one locus. To examine the time when the ORM gene was duplicated in the evolution of primates, plasma samples from 118 apes (family Pongidae) belonging to 4 genera and 12 species were investigated for ORM polymorphism using isoelectric focusing followed by immunoprinting. The band patterns of ORM in the subfamily Ponginae showed quantitatively different products as in humans. A pedigree study of common chimpanzees supported the two-locus model for ORM. Gibbons (subfamily Hylobatinae) displayed highly variable band patterns, but the number of loci was not determined unequivocally. Thus, this study shows that duplication of theORM gene in primates occurred either before or after the divergence of Hylobatinae and Ponginae, consistent with a previous prediction from the molecular evolutionary rate of ORM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00554127
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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