Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (4)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth and characterization of CdxHg1−xTe (0.4〈x〈1) based quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1774-1781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdxHg1−xTe epilayers and CdxHg1−xTe/CdyHg1−yTe quantum well heterostructures have been grown by molecular beam epitaxy. The various parameters of the growth technique have been carefully optimized: control of the thickness by the observation of the oscillations of the reflection-high-energy electron diffraction, the alloy composition by measuring the Cd sticking coefficient in our growth procedure, and the quality of the interfaces by performing transmission electron microscopy. The photoluminescence spectra at 5 K of thick CdxHg1−xTe epilayers are dominated by bound exciton recombination below the fundamental band gap Eg. By contrast, the main emission in the quantum wells photoluminescence spectra is due to an intrinsic recombination of the confined carriers in their respective ground state. The influence of CdxHg1−xTe well thickness and the CdyHg1−yTe barrier composition of this quantum well transition energy are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351213
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Luminescence characterization of CdTe:In grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2651-2653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm−3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104797
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Nonlinear interdiffusion in semiconductor superlattices: Case of CdTe/HgTe (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2548-2550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments have been designed to measure the interdiffusion coefficients in CdTe/HgTe (001) superlattices grown by molecular beam epitaxy. The interdiffusion coefficients are deduced from double-crystal x-ray diffraction on samples annealed in the 200–240 °C range under a Hg saturated pressure. Our results indicate that the interdiffusion is strongly dependent on concentration with a coefficient given by D(CCd,T)=1.0 exp{[−1.45(±0.1) eV]/(kT)} exp {[−0.55 (±0.1) CCd eV]/(kT)} cm2/s. The activation energies ΔEHgTe≈1.45 eV and ΔECdTe≈2.0 eV are consistent with an interdiffusion process by a vacancy mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109292
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Implantation-enhanced interdiffusion of CdTe-ZnTe heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2524-2534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation-enhanced interdiffusion of CdTe-ZnTe strained heterostructures is studied by photoluminescence, channeling, transmission electron microscopy, and secondary-ion-mass spectrometry. In the tellurides, implantation defects significantly diffuse and anneal out during implantation, so that only residual extended defects are found, at depths several times greater than the implantation projected range Rp. As a result, interdiffusion is achieved during the implantation, and not during the subsequent annealing which only serves to eliminate the residual defects, thereby restoring the optical properties of the heterostructures. Evidence has been found for trapping of residual defects at the interfaces, perhaps due to strain, and of slower diffusion in multiple quantum wells than in bulk material. These interface-trapped defects are quite hard to anneal out, so that single quantum wells exhibit poor optical properties after implantation and annealing, while multiple quantum wells give rise to nice photoluminescence spectra with sharp blue-shifted lines and appear as promising candidates to realize lateral confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354693
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...