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  • 1990-1994  (6)
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Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Investigation of deep levels in Zn-doped InSe single crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2274-2279 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in p-InSe single crystals doped with zinc have been investigated by resistivity, Hall-effect, photoinduced-current transient spectroscopy, and space-charge-limited-current measurements. Hole traps located about 0.59 eV above the valence band have been detected and the corresponding thermal capture cross sections evaluated. These trapping levels are probably associated with defects due to dopant atoms in the interlayer regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351126
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Space-charge-limited currents in amorphous gallium sulfide thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 320-323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density N(E) of midgap states in vacuum-evaporated and thermally annealed amorphous GaS films has been deduced from space-charge-limited-current (SCLC) measurements. Specimens with an In/a-GaS/stainless-steel sandwich structure have been used to obtain current-voltage characteristics at room temperature. By using an analytical method the density N(E) over an energy range extending about 0.18 eV above the Fermi level at thermal equilibrium has been calculated. The conductivity data for variable-range hopping [log(σ)∝T−1/4] have also been studied, but the calculated values of N(E) are approximately one order of magnitude higher than those obtained by SCLC measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347715
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of the electrical properties of Cd-doped indium selenide (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6847-6853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistivity, Hall-effect, and deep-level transient spectroscopy measurements have been performed on Cd-doped InSe single crystals grown by the Bridgman–Stockbarger method. The temperature dependence of the hole mobility can be explained by combining the optical phonon and the ionized impurity scatterings. Two hole-trapping levels have been detected at 0.42 and 0.48 eV above the valence band with a capture cross section of about 10−17 cm2. Finally, we have found the latter trap to be a deep acceptor level, which is very probably associated with defects or defect complexes formed by the dopant atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349807
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of electronic properties of gallium sulfide single crystals grown by iodine chemical transport (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 138-142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoinduced-current-transient-spectroscopy and space-charge-limited-current measurements have been performed on n-type GaS single crystals grown from vapor by iodine chemical transport. Three electron traps located at 0.17, 0.45, and 0.56 eV from the conduction band have been detected, with a thermal capture cross section of 2×10−19, 5×10−14, and 8×10−13 cm2, respectively. Moreover, by Hall-effect measurements, an impurity hopping conduction with an activation energy of 0.12 eV has been evidenced in the range of temperatures between 220 and 320 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347105
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Hall effect and impurity levels in lead doped indium selenide (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3982-3986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall effect and deep hole level studies in indium selenide single crystal doped with lead are reported. The temperature dependence of the hole mobility can be interpreted by combining the homopolar optical phonon and the ionized impurity scatterings. Electrical properties above 180 K are dominated by an acceptor center at 0.48 eV from the valence band. Moreover, two hole traps of 0.49 and 0.63 eV depths have been evidenced by deep-level transient spectroscopy measurements. These centers are probably associated with defects or defect complexes due to lead atoms precipitated in the interlayers of the crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356019
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Deep level spectroscopy in p-GaSe single crystals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6581-6582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels have been examined in nonintentionally doped p-type gallium selenide single crystals using photoinduced current transient spectroscopy measurements. Two hole trapping levels at 0.20 and 0.80 eV above the valence band have been observed and the corresponding thermal capture cross section evaluated. The possible origin and nature of these centers are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345090
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    Paper (German National Licenses)
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