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  • 1
    Digitale Medien
    Digitale Medien
    Deep levels in indium selenide single crystals doped with iodine (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5427-5430 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron trapping levels in indium selenide single crystals doped with iodine have been investigated by deep-level-transient spectroscopy measurements. Two traps located at about 0.60 and 0.21 eV have been detected below the conduction band and the corresponding thermal capture cross sections have been evaluated. The first trap is present both in undoped and doped InSe crystals, whereas the second trap appears in doped samples. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359724
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  • 2
    Digitale Medien
    Digitale Medien
    Hall effect and impurity levels in lead doped indium selenide (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3982-3986 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hall effect and deep hole level studies in indium selenide single crystal doped with lead are reported. The temperature dependence of the hole mobility can be interpreted by combining the homopolar optical phonon and the ionized impurity scatterings. Electrical properties above 180 K are dominated by an acceptor center at 0.48 eV from the valence band. Moreover, two hole traps of 0.49 and 0.63 eV depths have been evidenced by deep-level transient spectroscopy measurements. These centers are probably associated with defects or defect complexes due to lead atoms precipitated in the interlayers of the crystal.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356019
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  • 3
    Digitale Medien
    Digitale Medien
    Deep level spectroscopy in p-GaSe single crystals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6581-6582 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels have been examined in nonintentionally doped p-type gallium selenide single crystals using photoinduced current transient spectroscopy measurements. Two hole trapping levels at 0.20 and 0.80 eV above the valence band have been observed and the corresponding thermal capture cross section evaluated. The possible origin and nature of these centers are also discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345090
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  • 4
    Digitale Medien
    Digitale Medien
    Density of states in evaporated amorphous GaSe films using space-charge-limited current measurements (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1885-1888 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The gap-state distribution in vacuum-evaporated amorphous GaSe is studied by space-charge-limited current measurements. Samples with In/α-GaSe/In sandwich structures were used to obtain current-voltage characteristics. By using an analytical method the gap-state density N(E) over an energy range extending about 0.16 eV below the thermal equilibrium Fermi level EF0 is calculated. The resulting values are in agreement with the density of states N(EF0) at the Fermi level obtained from the dark-conductivity data for variable range hopping.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342473
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  • 5
    Digitale Medien
    Digitale Medien
    Investigation of deep levels in Zn-doped InSe single crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2274-2279 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels in p-InSe single crystals doped with zinc have been investigated by resistivity, Hall-effect, photoinduced-current transient spectroscopy, and space-charge-limited-current measurements. Hole traps located about 0.59 eV above the valence band have been detected and the corresponding thermal capture cross sections evaluated. These trapping levels are probably associated with defects due to dopant atoms in the interlayer regions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351126
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  • 6
    Digitale Medien
    Digitale Medien
    Investigation of the electrical properties of Cd-doped indium selenide (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6847-6853 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Resistivity, Hall-effect, and deep-level transient spectroscopy measurements have been performed on Cd-doped InSe single crystals grown by the Bridgman–Stockbarger method. The temperature dependence of the hole mobility can be explained by combining the optical phonon and the ionized impurity scatterings. Two hole-trapping levels have been detected at 0.42 and 0.48 eV above the valence band with a capture cross section of about 10−17 cm2. Finally, we have found the latter trap to be a deep acceptor level, which is very probably associated with defects or defect complexes formed by the dopant atoms.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349807
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  • 7
    Digitale Medien
    Digitale Medien
    Investigation of electronic properties of gallium sulfide single crystals grown by iodine chemical transport (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 138-142 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoinduced-current-transient-spectroscopy and space-charge-limited-current measurements have been performed on n-type GaS single crystals grown from vapor by iodine chemical transport. Three electron traps located at 0.17, 0.45, and 0.56 eV from the conduction band have been detected, with a thermal capture cross section of 2×10−19, 5×10−14, and 8×10−13 cm2, respectively. Moreover, by Hall-effect measurements, an impurity hopping conduction with an activation energy of 0.12 eV has been evidenced in the range of temperatures between 220 and 320 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347105
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  • 8
    Digitale Medien
    Digitale Medien
    Space-charge-limited currents in amorphous gallium sulfide thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 320-323 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The density N(E) of midgap states in vacuum-evaporated and thermally annealed amorphous GaS films has been deduced from space-charge-limited-current (SCLC) measurements. Specimens with an In/a-GaS/stainless-steel sandwich structure have been used to obtain current-voltage characteristics at room temperature. By using an analytical method the density N(E) over an energy range extending about 0.18 eV above the Fermi level at thermal equilibrium has been calculated. The conductivity data for variable-range hopping [log(σ)∝T−1/4] have also been studied, but the calculated values of N(E) are approximately one order of magnitude higher than those obtained by SCLC measurements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347715
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  • 9
    Digitale Medien
    Digitale Medien
    Photoelectronic and optical properties of amorphous gallium-selenide thin films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4231-4235 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical absorption coefficient, dark conductivity, and photoconductivity properties of amorphous GaSe thin films are reported. The dependence of the absorption coefficient α on the photon energy (h-dash-bar)ω at the edge of the absorption band is well described by the relation α(h-dash-bar)ω=B((h-dash-bar)ω−Eopt)2 with an optical gap Eopt of 1.50–1.55 eV. The dark conductivity σd at low temperature obeys the law ln σd∝T−1/4, indicating a variable range hopping in localized states near the Fermi level. From the analysis, a density of states N(EF)(approximately-equal-to)1018 cm−3 eV−1 has been estimated. The dependence of the photoconductivity on the temperature and on the light intensity is analyzed by a simple kinetic model which takes into account two Shockley–Read type imperfections.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339095
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  • 10
    Digitale Medien
    Digitale Medien
    Physical properties of osmium doped tin oxide thin films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2369-2371 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366982
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