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  • 1990-1994  (3)
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Material
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  • 1
    Electronic Resource
    Electronic Resource
    Surface mobility of C60 on SiO2 (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 4855-4859 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The interaction of a collisionless beam of thermal C60 nanoclusters with a silicon dioxide surface has been investigated with modulated molecular beam-mass spectroscopic techniques. Analysis of the amplitude and phase lag of the desorbed C60 shows the interaction mechanism to involve the elementary steps of sticking, desorption, and long-range surface diffusion. Surface diffusion coefficients determined in this measurement indicate that surface C60 nanoclusters approach two-dimensional gas-like behavior. The sticking probability of C60 clusters on SiO2 is determined to be unity. The best fit desorption rate constant kd for C60 from SiO2 is 5×1010 exp(−23 kcal/mol/RT) in agreement with previous temperature programmed desorption experiments. The efficiencies of electron impact ionization of C60 to C60+ and C60++ is measured for electron energies from 10 to 105 eV for neutrals at 875 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466032
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of SiC films by pulsed excimer laser ablation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1540-1542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of β-SiC were grown on Si substrates by excimer laser pulse ablation of bulk SiC. The films were examined by Auger electron, x-ray, and photoelectron spectroscopies and laser ionization mass analysis techniques. The film was smooth as monitored by scanning electron microscopy. Scanning electron and scanning tunneling microscopy (STM) showed inclusions in the deposited SiC films, and laser ionization mass analysis detected SiC dimers in the vapor plume emitted from the target.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103346
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Vapor pressure of Buckminsterfullerene (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1313-1314 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vapor pressures of the fullerenes C60 and C70 have been measured over the temperature range 400–600 °C by the Knudsen-effusion thermogravimetric technique. For C60, a heat of sublimation of 38±1 kcal/mol is obtained, and the value for C70 is 45±1 kcal/mol. The vapor pressure of C60 ranges from 1.8×10−5 and 1.4×10−2 Torr and that of C70 is between 1.4×10−5 and 8.7×10−3 Torr over the temperature range investigated. At 500 °C, the vapor pressure of C60 is about 1035 that of graphite. The entropy of vaporization of C60 obeys Trouton's rule.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107327
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    Paper (German National Licenses)
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