Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 1540-1542
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin films of β-SiC were grown on Si substrates by excimer laser pulse ablation of bulk SiC. The films were examined by Auger electron, x-ray, and photoelectron spectroscopies and laser ionization mass analysis techniques. The film was smooth as monitored by scanning electron microscopy. Scanning electron and scanning tunneling microscopy (STM) showed inclusions in the deposited SiC films, and laser ionization mass analysis detected SiC dimers in the vapor plume emitted from the target.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103346
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