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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2833-2835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel fabrication method for ultrafine silicon wires is presented. To achieve electron physical confinement with a high potential SiO2 barrier, the SIMOX (separation by implanted oxygen) technique, electron beam lithography, anisotropic chemical etching, and thermal oxidation are used. The size of the wires is controlled by the lithography, the thickness of the top silicon layer and the thermal oxidation for narrowing the patterned silicon wire. The steplike structure in the conductance versus gate voltage curve, which remains up to higher temperatures for a smaller wire, suggests that a strong one-dimensional transport effect occurs in this silicon wire. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112991
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Segregation and defect termination of fluorine at SiO2/Si interfaces (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 375-377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Segregation of fluorine in a SiO2/Si structure has been examined with respect to depth profile and paramagnetic defects at the SiO2/Si interface. The fluorine distribution was found to be restricted to a narrow (less than 35 A(ring)) interface region on the oxide side. Furthermore, a greater amount of fluorine segregation was observed for (111) than for (100) interfaces. These observations suggest that fluorine segregation is caused by intrinsic defects in the interface region and that fluorine atoms terminate the defects. In fact, electron spin resonance measurements provide direct confirmation that fluorine atoms terminate the trivalent Si dangling bonds at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108961
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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