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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3964-3969 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double crystal x-ray analysis has been carried out on GaAs wafers implanted with 1.15 MeV sulfur ions at a dose of 5×1014/cm2, followed by rapid thermal anneal for 10 s at temperatures between 300 and 1100 °C. A systematic reduction of strain with increased annealing temperature has been observed, as measured from the separation between the peak of the unimplanted substrate and the major peak of the strained region. Calculations of strain distribution based on existing numerical models are correlated with implantation parameters using Pearson's type-VI distribution functions. Strain reduction after a silicon nitride encapsulation process is found to be equivalent to that after a 300 °C, 10 s rapid thermal anneal (RTA). It is also found that strain relaxation by RTA is strongly dependent on both sample size and the annealing geometry.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 671-675 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field of up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show a beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses of electrons associated with the lowest three subbands can therefore be directly determined, and they are in excellent agreement with a self-consistent calculation, which takes into account the electrostatic Poisson equation, the Schrödinger equation, and realistic sample parameters. Furthermore, we observed an absorption peak, whose resonance position has anomalous angle dependence. It is attributed to impurity CR where donors are in the vicinity of the δ-doped sheet.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7166-7172 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 300 A(ring) buffer layer of InSb grown by atomic layer epitaxy at a substrate temperature of 300 °C at the GaAs/InSb interface has been employed to grow epitaxial films of InSb having bulk-like properties. The reduction of the defects in the top InSb film has been observed with cross-sectional transmission electron microscopy and channeling Rutherford backscattering spectroscopy. The optimum substrate temperature for the primary InSb layer growth was 420 °C with an atomic flux ratio of Sb to In of 1.4 and a growth rate of 1 μm/h. The best 5-μm-thick InSb layers had x-ray rocking curve widths of 100 s, 77 K n-type carrier concentrations in the low 1015/cm3 range, and 77 K carrier mobilities greater than 105 cm2/V s. Mesa isolated photodiodes had carrier lifetimes of 20 ns, in comparison to 200 ns observed in bulk InSb having a similar carrier concentration. An unexplained, weak free-electron spin resonance transition has been observed in these films.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 33 (1994), S. 6936-6944 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 76-78 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sb-doped Si films have been grown on (100) Si substrates at low temperature (∼350 °C) by molecular beam epitaxy. Through coevaporation with Sb, very high doping efficiencies were achieved over a carrier concentration range of 1×1017 to 1×1020 cm−3. Through calibration of the beam flux we found that the incorporation of Sb was very near unity up to a concentration of ∼5×1019 cm−3. As-grown films are of good quality. However, furnace annealing was shown to improve the mobility and completely activate the Sb. Temperature dependent Hall measurements were used to further characterize the films.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1218-1220 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) response at the E1 (2.9 eV) transition of GaAs doped with Si, Zn, and Be was investigated within the range of 1.5×1015 to 2×1019 cm−3. Growth technique was either metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). We find that Γ1, the broadening parameter of the E1 structure increases linearly with the logarithm of the measured carrier concentration over the range of ≈1×1017 to ≈1×1019 cm−3. A slope of 56±5 meV/decade describes all Si:GaAs samples independent of growth technique. For p-GaAs, the slope is 30±3 meV/decade over a comparable range and is independent of doping element as well as growth technique. This linear relation could be employed as a contactless means of determining carrier concentration. The energy position of E1 shows no significant shift in the above range. We believe that the broadening is a result of the doping produced, electric field within the depletion region.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 857-859 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical bistability at room temperature has been observed for the first time in a II-VI semiconductor self-electro-optic effect device fabricated by molecular beam epitaxy. The optical switch is based on a ZnSe/ZnCdSe multiple quantum well structure situated within a p-n junction and the devices operate at 488 nm in the blue-green spectral region.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1381-1383 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy, depth profiling with secondary ion mass spectrometry, and conductivity measurements have been performed on Sb-doped Si(100) films grown at low temperature (350 °C) by molecular beam epitaxy. The measurements reveal two important effects: (1) a significant increase in the surface segregation of Sb as the dopant concentration approaches 1×1020 cm−3, and (2) a decrease in surface segregation as the surface concentration of Sb reaches one monolayer. We believe that the presence of this monolayer of Sb is responsible for the surface segregation becoming self-limited and the associated bulk concentration exceeding 1×1020 cm−3.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 49 (1994), S. 0 
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Studies have shown that the dust mites Dermatophagoides pteronyssinus and D. farinae contain several serine proteases, two of which have been shown to be allergenic, and to include trypasin and chymotrypsin, corresponding to the groups III and VI mite allergens. However, mites also contain other serine proteases, and the data reported in this study show that an elastase-like enzyme is present in both species. This enzyme was differentiated from the other serine proteases, particularly chymotrypsin, on the basis of charge, substrate specificity, and inhibition by copper and mercury cations. Its apparent mol. mass, as judged by gel filtration, was similar to those previously described for trypsain and chymotrypsin, i.e., 30 kDa. Several isoforms were detected by isoelectric focusing, but the isoelectric points of the major forms in both D. pteronyssinus and D. farinae were 10.5 and 9.8, respectively, contrasting with the acidic mite chymotrypsins. All three serine proteases were detected in whole mite and faecally enriched extracts, but the activities of trypsin and the elastase-like enzyme were greater in the latter type of extract. These data were similar to those obtained by quantitative immunochemical analysis of the D. farinae group III allergen in appropriate extracts, suggesting that culture conditions may modulate protease production. A monoclonal antibody affinity matrix specific for the group III allergen from D. farinae was shown to bind mite trypsin. However, a small amount of mite chymotrypsin also bound, suggesting limited immunologic cross-reactivity, a finding consistent with known sequence data.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 589 (1990), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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