Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Oxygen incorporation in molecular-beam epitaxial silicon doped using a boric oxide source (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2751-2754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen incorporation in epitaxial silicon produced by molecular-beam epitaxy and boron doped by coevaporation of boric oxide has been investigated. The concentration of oxygen in the deposited layers was measured using secondary-ion mass spectrometry and shown to depend on a number of growth parameters. A reaction mechanism is proposed and is quantitatively modeled using a thermodynamic approach. A simple expression is given for determining the onset of oxygen incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341619
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Influence of growth conditions on undoped and sulfur-doped InP grown by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 213-218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and sulfur-doped InP have been grown by molecular-beam epitaxy. Undoped InP is n type and contains residual sulfur incorporated from the phosphorus source material. Increasing substrate temperatures during growth cause a decrease in the residual doping level to 2–3×1015 cm−3 but are associated with an increase in the compensation ratio and an increase in the concentration of epilayer defects, up to 105 cm−2. Doping with sulfur produced from an electrochemical sulfur cell has been studied in the range 5×1016–6×1019 cm−3. Highly doped layers show greatly improved surface morphology compared to low and undoped InP layers. Sulfur is shown not to diffuse to any measurable extent during MBE growth; however, at high growth temperatures (530 °C) there is loss of sulfur as a volatile indium sulfide. The removal of the surface oxide from the InP substrate before growth has been studied as a function of substrate temperature and phosphorus overpressure. The oxide layer can be removed at a low temperature (∼480 °C) by using a low pressure of P4 rather than P2 as is used during growth. The low-temperature oxide removal leads to improved epilayer morphology for undoped layers. The removal of the surface oxide and the loss of sulfur during growth as a volatile sulfide are discussed in terms of the free energy of formation of the various possible products.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337684
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Electrochemical capacitance-voltage profiling of n-type ZnSe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5311-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we report the first detailed study of electrochemical capacitance-voltage profiling of ZnSe. An electrolyte consisting of 1 M sodium hydroxide and 1 M sodium sulphite has been developed that does not deposit selenium while etching the surface of n-type ZnSe during C-V profiling. The dissolution number of the electrolyte/ZnSe system is a function of the strength of electrolyte and the etching current and in order to obtain an accurate etching depth a constant etching current mode was used. A wide range of doping concentrations including both uniformly doped and staircase structures have been measured demonstrating that the electrochemical C-V profiler can now be a routine tool for assessing the growth parameters of ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352016
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Compensating acceptors and donors in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2167-2169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compensating acceptors and donors in nitrogen δ-doped ZnSe epilayers grown by molecular beam epitaxy using a nitrogen rf-plasma source are studied by means of photoluminescence (PL) and photoluminescence excitation spectroscopy (PLE). The temperature dependence of PL and PLE spectra obtained from the nitrogen δ-doped layers is investigated in detail, and a deep acceptor and a deep donor with ionization energies of ∼170 and ∼88 meV are reported for the nitrogen δ-doped layers. These two deep centers are assigned to N clusters, i.e., NSe-Zn-NSe for the deep acceptor and NSe-NZn for the deep donor. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115091
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Excitonic properties of MgS/ZnSe quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3755-3757 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic field and temperature dependent measurements are used to study the excitonic properties of high quality ZnSe quantum wells in MgS barriers grown by molecular beam epitaxy. The small inhomogeneous broadening of the samples allows the observation of higher excited exciton states. Due to the large difference in band gap between ZnSe and MgS a value of 43.9 meV was measured for the exciton binding energy which is the largest reported for this material system. The full width at half maximum of the heavy hole transitions is measured as a function of temperature and the broadening of the excitonic transitions in narrow quantum wells is reduced compared to the ZnSe bulk value due to the expected reduction in the LO-phonon scattering. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331095
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence properties of MgS/CdSe quantum wells and quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 443-445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of MgS/CdSe quantum structures grown by molecular beam epitaxy are characterized by photoluminescence (PL) spectroscopy. The increase in the CdSe thickness from 1 to beyond 3 ML results in the formation of, at first, quantum wells (QWs) and then quantum dots (QDs) by Stranski–Krastanov growth. The PL temperature dependence measurements reveal that, in the QWs, excitons localized by potential fluctuations principally govern the PL properties, which is in strong contrast to the QD PL properties. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435407
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3929-3931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc blende MgS has been grown on GaAs by molecular beam epitaxy using a novel method where the sources were Mg and ZnS. A reaction at the surface results in the formation of MgS layers with a Zn content estimated by secondary ion mass spectrometry and Auger spectroscopy to be between 0.5% and 2%. Double crystal x-ray rocking curve measurements of ZnSe/MgS/ZnSe layers show layers with good crystallinity. Using this growth technique layers up to 67 nm thick have been grown. Photoluminescence measurements of MgS/ZnSe/MgS single-quantum-well structures show that the confinement of the heavy hole excitons can be as large as 430 meV for a 1.7 nm well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126824
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Topography measurements of the critical thickness of ZnSe grown on GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3148-3150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron-based x-ray topography (XRT) measurements have been used to study the initial stages of relaxation in ZnSe layers grown by molecular beam epitaxy on vertical gradient freeze Bridgman GaAs substrates. The formation of the very first strain-relieving misfit dislocations in the grown ZnSe layers has been detected in a layer of thickness 100 nm. No such dislocations have been observed in a corresponding layer of 95 nm thickness. The critical thickness for this material system is therefore estimated to be 97.5±2.5 nm, which is markedly lower than the widely accepted value of 150 nm. In contrast to the InGaAs/GaAs system, combined XRT and transmission electron microscopy studies indicate that the initial misfit dislocations observed for ZnSe/GaAs are not, in general, formed by the bending over of pre-existing threading dislocations into the interface, but by other mechanisms such as stacking fault decomposition. The critical thickness data obtained have been used to infer the maximum critical thickness of CdZnSe quantum wells possible in II–VI laser diodes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121575
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    II–VI quantum confined Stark effect waveguide modulators (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 946-948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum confined Stark effect p-i-n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116107
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Nitrogen doping during atomic layer epitaxial growth of ZnSe (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3927-3929 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the growth and characterization of ZnSe:N layers by atomic layer epitaxy (ALE) using a nitrogen rf-plasma source. The ALE-grown ZnSe:N layers have been investigated in terms of in situ reflection high electron energy diffraction and ex situ capacitance–voltage profiling and photoluminescence spectroscopy. The net acceptor concentration in the ALE-grown layer has been obtained as high as 1.2×1018 cm−3 and the ALE layers of ZnSe:N show reduced number of compensating deep centers compared with the ZnSe:N grown by molecular beam epitaxy. The effects of the Fermi level at a growing surface on the generation of compensating donors with a binding energy of 57 meV are also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114407
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...