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  • 1990-1994  (6)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Atomic transport in thermal spike induced ion mixing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4292-4296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple relationship between the ratio of atomic transport induced by ion mixing and the activation energies for the impurity diffusion of constituents in a bilayer is presented to describe quantitatively the symmetric and asymmetric atomic transport in the thermal spike induced ion mixing. The model predicts fairly satisfactorily the trend of experimental observations in the bilayer systems which have near zero heats of mixing and relatively high spike activation energies. For instance, the Pd/Co bilayer system shows nearly symmetric atomic transport, since its constituents have similar activation energies for the impurity diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352811
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ar+-induced mixing mechanisms in metal-metal bilayer systems (1992)
    Springer
    Journal of materials science 27 (1992), S. 2141-2146 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Ion-beam mixing in Al-Pd, Al-Cr, Pd-Cu, Ag-Cu and Ag-Fe bilayers has been studied using Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) over an ion dose range between 1 × 1015 and 1 × 1016 Ar+ cm−2 at room temperature. RBS and AES results show that the mixing efficiency of the light elements is higher than that of the heavy elements. The mixing efficiency of a heavy element is independent of the heat of mixing energy, while that of a light element has a close relation with the heat of mixing. The experimental results are discussed in terms of cascade mixing and thermal spike mixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01117928
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis of crystalline polyimide film by ionized cluster-beam deposition (1993)
    Springer
    Journal of materials science 28 (1993), S. 1537-1541 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Polyimide thin films were deposited by the ionized cluster-beam deposition technique. Imidization and crystallization of polyimide films were investigated using transmission electron microscopy and Fourier transform infrared spectroscopy. Polyimide films deposited under optimum conditions showed a maximum imidization and good crystal structure, which is superior to that of films fabricated by other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00363345
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Comparative study on phase formation in Al-Pd thin film by ion beam mixing and thermal annealing (1991)
    Springer
    Journal of materials science 26 (1991), S. 721-725 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Ion beam mixing and/or thermal annealing were conducted to study the phase formation and dissociation in Al-Pd thin films. The films were prepared by sequential evaporation, Ar+ ion mixed, annealed at 350 °C for 1 h under vacuum and then analysed by RBS, TEM and XPS. The intermetallic compounds formed by ion mixing alone are found to be Al3Pd2 and AlPd at a dose of 1.5 × 1016 Ar+ cm−2. Thermal annealing after this radiation gave two new phases of Al3Pd and Al3Pd5 in addition to Al3Pd2 and AlPd. For an as-annealed sample without Ar+ bombardment, the observed phases are Al3Pd, Al3Pd2 and AlPd. The different behaviours in phase formation between ion beam mixing and thermal annealing are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00588310
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-induced interfacial mixing in Al/Pd bilayers: incident ion energy and film thickness dependence (1991)
    Springer
    Journal of materials science 26 (1991), S. 1867-1872 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The dependence of ion beam mixing on the incident ion energy and film thickness in the Al/Pd system are investigated through both experiment and Monte Carlo simulation based on cascade mixing. It is found that the optimum film thickness is the mean damage depth and the degree of mixing increases with increasing incident ion energy. The radiation-enhanced diffusion or thermochemical driving force is found to play an important role, even in the low-energy region (〈 40 keV).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00543617
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Mechanism of adhesion improvement in ion-beam mixed Cu/SiO2 (1994)
    Springer
    Journal of materials science 29 (1994), S. 749-753 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A thin copper layer (35 nm) deposited on SiO2 has been subjected to ion-beam mixing with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated using Rutherford backscattering spectroscopy, grazing-angle X-ray diffraction, X-ray photo-electron spectroscopy and scratch testing. The adhesion of the copper film was improved by a factor of three at a dose of 1.5 × 1016 Ar+ cm−2 by the ion-beam mixing at room temperature, while the high-temperature ion-beam mixing enhanced the adhesion by a factor of five. Ballistic mixing plays a role in the improvement of adhesion for the room-temperature ion mixing, and the creation of Cu2O phase induced by ion-beam mixing contributes to the enhancement of adhesion at high temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00445989
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    Paper (German National Licenses)
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