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  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Transient growth rate change during gas source molecular beam epitaxy of Si1−xGex alloys (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2042-2044 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si1−xGex using disilane and germane are reported. Transient changes of the oscillation period and hence the growth rate are observed during the growth. Their origin is discussed on the basis of hydrogen desorption kinetics on the alloy surface and attributed to Ge surface segregation effects at the growth interface. This observation provides a unique opportunity for in situ investigations with monolayer-scale resolution, of Ge segregation effects in Si/Si1−xGex heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109473
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3066-3068 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction intensity oscillations during Ge heteroepitaxy on Si(100) have been observed using a gas source molecular beam epitaxy system. Intensity oscillations can be observed over 6 ML (monolayers) of growth in the temperature range 400–650 °C. The oscillation frequency, however, varies from the first to subsequent layers and this variation is interpreted primarily as a change in the limiting growth kinetics as the surface composition changes from Si to Ge. Growth temperature and GeH4 flux dependence data indicate that the surface Ge concentration increases gradually, not abruptly, over the first several layers of deposition. Surface roughening effects which are attributed to Stranski–Krastanov type growth, are also found to contribute to the nonuniform oscillation frequency. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112508
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGex alloys on Si(100) surfaces (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2548-2550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using reflection-high-energy-electron-diffraction intensity oscillations the growth rate of Si1−xGex alloys at various compositions and different growth temperatures has been studied in situ. It was found that the growth rate shows a strong dependence on GeH4 flux at low temperatures (T〈600 °C), while at high temperatures (T(approximately-greater-than)600 °C) the growth rate is nearly independent of the GeH4 flux but proportional to the incident Si2H6 beam flux. In addition to the enhanced growth rate, a lower activation energy is observed in the low temperature region when compared to Si homoepitaxy from Si2H6. This suggests that surface germanium atoms act as good sites for hydrogen removal which is known to inhibit Si growth from hydride sources at low temperatures. Above 600 °C, however, surface hydrogen is desorbed thermally and the addition of GeH4 has little effect on the growth rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108122
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    Paper (German National Licenses)
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