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  • 1990-1994  (14)
Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 8393-8402 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 1759-1768 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5868-5875 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: UV laser irradiation of ammonia adsorbed on GaAs(100) leads to molecular desorption, with a mean translational temperature of 〈Etrans/2k(approximately-greater-than)=300 K, independent of photon energy and isotope substitution. However, the photodesorption cross section depends strongly on isotope substitution: σNH3/σND3=4.1 at hν=6.4 eV. This isotope effect is too large to be accounted for by the mass difference in the leaving particles (NH3 vs ND3), but can be successfully explained in terms of an isotope effect in the internal N–H(D) coordinates. We take this as evidence for uv-driven photodesorption from electronically quenched, but vibrationally hot ground state ammonia.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5856-5867 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: UV laser irradiation of ammonia adsorbed on GaAs(100) leads to molecular desorption and dissociation. A nitride passivation layer can be formed on the GaAs surface at 100 K by simultaneous exposure to ammonia and uv photons in a UHV environment. The nitride layer consists of a mixture of Ga and As nitrides. While the dominating GaN surface species is thermally stable, AsN desorbs below 800 K. Surface NH2 is identified as an intermediate. The implication of this study for selective area passivation and GaN growth is discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 7015-7016 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We demonstrate that surface plasmon oscillations excited at an adsorbate covered metal–vacuum interface can effectively couple to the electronic system of the adsorbed molecule. Using p-polarized light (hν=3.5 eV) incident at the surface plasmon resonant angle in Kretschmann's attenuated-total-reflection (ATR) configuration, we observe a strong enhancement of the photodissociation rate of Mo(CO)6 from a 180 A(ring) Al film, evaporated on a quartz prism in UHV.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 1555-1563 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation rate of phosgene (Cl2CO) adsorbed on Pt(111) has been measured as a function of photon energy at normal incidence and as a function of incident angle using p-polarized light. Compared to the gas phase, the wavelength dependence of the initial photolysis cross section on the surface is redshifted. The angular response to p-polarized light is wavelength dependent. Above 315 nm, the angular dependence correlates with calculated metal absorption. At 280 nm, the angular dependence is much too strong to be accounted for solely by substrate excitation. A combination of substrate and direct excitation is adequate. This is the first direct evidence, for monolayers on metals, that both direct and substrate excitation contribute to surface photochemistry but dominate at different wavelengths.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2681-2682 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rates of photodissociation and photodesorption of dioxygen adsorbed on Ag (110) under ultraviolet irradiation have been measured as a function of polarization at normal incidence. No dependence of the rate was found on the angle between the O2 bond axis and the electric vector of the incident light. This result supports a mechanism for surface photochemistry in which substrate excitation is the dominant process.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 605-615 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Molecular AsH3, adsorbed on Ga-rich GaAs(100) at 115 K, dissociates readily upon uv irradiation with 193, 248, and 351 nm excimer laser light. In the initial photodissociation step one As–H bond cleaves, leaving all the AsH2, and a large fraction of the H, adsorbed to As. The AsH2 further photodissociates to give As–H and Ga–H. The final steps, photochemical removal of hydrogen from Ga–H and As–H, lead to As deposition. The photodissociation cross section decreases sharply with the extent of photolysis. The wavelength dependence, compared to the gas-phase absorption cross section, extends to much lower photon energies and indicates that substrate-mediated excitation dominates the observed chemistry. There are strong isotope effects in all the cross sections; these are related to mass-dependent substrate-mediated quenching of the excited states. Implications for photon-assisted organometallic chemical vapor deposition are discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 10021-10033 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photon-driven (2.5 to 6.4 eV) desorption of SO2 (coverages up to 2.7 monolayers) on Ag(111) has been studied by time-of-flight mass spectrometry in combination with temperature programmed desorption and Auger electron spectroscopy. The photodesorption yields per incident photon increase with photon energy. Consistent with substrate-mediated excitation, the mean translational energy 〈Etrans/2k〉 is constant (650 K) for photon energies between 3.5 and 6.4 eV, but decreases at longer wavelengths (480 K at 2.5 eV). The decrease is attributed to changes in the energy distribution of the hot substrate carriers responsible for desorption. The photodesorption yields vary with the initial coverage, the method of preparing the initial coverage, and the extent of photolysis. These variations are attributed, in part, to changes in the SO2 orientation on the surface. Even at 6.4 eV, where unimolecular photodissociation occurs in the gas phase and multilayer, there is no photodissociation in monolayers. This effect is attributed to strong substrate quenching.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3175-3177 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monolayer nitridation of Ga-rich GaAs(100) is achieved at 100 K by simultaneous exposure to ammonia and 6.4 eV photons in a vacuum environment. This process is a result of nonthermal photodissociation of adsorbed ammonia. Surface NH2 is identified as an important intermediate in nitridation.
    Type of Medium: Electronic Resource
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