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  • 1
    Electronic Resource
    Electronic Resource
    Effect of mismatch strain on band gap in III-V semiconductors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5428-5432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial elastic strain induced by the lattice parameter mismatch between epilayer and substrate results in significant energy–band-gap shifts for III-V alloys. The epilayers used in this study are GaxIn1−xAs on (100) InP and GaxIn1−xP on (100) GaAs prepared by organometallic vapor phase epitaxy. For layer thicknesses between 1 and 1.5 μm, and Δas.f./a0≤3.5×10−3 the misfit strain is assumed to be accommodated elastically. The energy–band-gap shifts are determined by comparing the photoluminescence peak energies of the epilayers with the best experimental relation of band gap versus composition for unstrained layers. A calculation of the energy–band-gap shift due to biaxial stress made for GaxIn1−xAs is found to agree with the photoluminescence measurements. In addition, a comparison of the energy–band-gap shift for GaxIn1−xP shows a clearly different dependency for tensile and compressive strain, in good agreement with calculated results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334817
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  • 2
    Electronic Resource
    Electronic Resource
    Raman and photoluminescence spectra of GaAs1−xSbx (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4817-4819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first experimental Raman and photoluminescence spectra are presented for the metastable alloy GaAs1−xSbx grown by organometallic vapor phase epitaxy throughout its miscibility gap extending from x=0.2 to x=0.75. The phonon peak halfwidths are found to broaden by nearly a factor of 2 over halfwidths found in the binary compounds GaAs and GaSb. Phonon line shapes become more asymmetric in the miscibility gap as the selection rules break down; in addition, a second peak appears for samples grown near the center of the miscibility gap. Line shapes are analyzed and the phonon coherence length is found to be reduced from several hundred angstroms in GaAs to approximately 60 A(ring) in samples grown in the miscibility gap. The compositional dependence of the room-temperature band-gap energy has been found to closely follow earlier predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335299
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  • 3
    Electronic Resource
    Electronic Resource
    Differential Sensitivity of “Central” and “Peripheral” Type Benzodiazepine Receptors to Phospholipase A2 (1986)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 46 (1986), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The effects of preincubating cerebral cortical membranes with phospholipase A2 (PLA2) were examined on radioligand binding to benzodiazepine receptors of the “central” and “peripheral” types. PLA2 (0.005–0.1 U/ml) increased [3H]flunitrazepam and [3H]3-carbo-ethoxy-β-carboline binding by increasing the apparent affinities of these ligands with no concomitant change in the maximum number of binding sites. In contrast, neither γ-aminobutyric acid (GABA)-enhanced [3H]fluni-trazepam binding nor [3H]Ro 15–1788 binding was altered by preincubation with PLA2 at concentrations as high as 2 U/ml. Both pyrazolopyridine (SQ 65,396)- and barbiturate (pentobarbital)-enhanced [3H]flunitrazepam binding and [35S]t-butylbicyclophosphorothionate (TBPS) binding were markedly reduced by as little as 0.0025–0.005 U/ml of PLA2. These findings suggest that PLA2 inactivates the TBPS binding site on the benzodiazepine-GABA receptor chloride ionophore complex, which results in a selective loss of allosteric “regulation” between the components of this complex. PLA2 also reduced the apparent affinity of [3H]Ro 5–4864 to peripheral-type benzodiazepine receptors in cerebral cortical, heart, and kidney membranes, but increased the number of [3H]PK 11195 binding sites with no change in apparent affinity. These data demonstrate that PLA2 can differentially affect the lipid microenvironment of “central” and “peripheral” types of benzodiazepine receptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1986.tb13043.x
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  • 4
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2420-2422 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs1−xBix with x≤0.026 and InAs1−x−ySbyBix with x≤0.017 and y≤0.096 have been successfully grown on InAs (100) oriented substrates by atmospheric pressure organometallic vapor phase epitaxy using the precursors trimethylindium, trimethylbismuth, trimethylantimony, and arsine. Good surface morphologies for both InAsBi and InAsSbBi epitaxial layers were obtained at a growth temperature of 400 °C. A key growth parameter is the V/III ratio. Only a very narrow range near 4 (considering the incomplete pyrolysis of AsH3) yields smooth InAsBi epilayers. Typical growth rates were 0.02 μm/min. X-ray diffractometer scans show clearly resolved Kα1 and Kα2 peaks for the layer of InAs0.889Sb0.096Bi0.015 grown on an InAs substrate with a graded transition layer to accommodate the lattice parameter difference. The half widths of the peaks are comparable to those of the substrate. For the first time, photoluminescence (PL) at 10 K from these Bi-containing alloys has been measured. The PL peak energy is seen to decrease with increasing Bi concentration at a rate of 55 meV/at. % Bi. InAsSbBi is a potential material for infrared detectors operating in the wavelength range from 8 to 12 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102033
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  • 5
    Electronic Resource
    Electronic Resource
    Organometallic growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1346-1351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69) are described in this paper. The organometallic vapor-phase epitaxial (OMVPE) growth was carried out in an atomospheric pressure reactor using trimethylgallium (TMGa), trimethylindium (TMIn), and phosphine (PH3). GaAs and commercially available hydride vapor-phase epitaxial GaAs0.70P0.30 and GaAs0.61P0.39 were used as the substrates. The influence of growth temperature and V/III ratio on the properties of the OMVPE epilayers was studied. This resulted in the determination of an optimum growth temperature of 625 °C and an optimum V/III ratio range of 40–50. The results of the mismatch due to the different lattice constants of the GaxIn1−xP epilayer and the substrate were investigated. It was found that high-quality GaxIn1−xP epilayers can be obtained only when the mismatch ||Δa/a0|| is less than 1×10−3. Under the conditions mentioned above, epilayers were reproducibly obtained with featureless surface morphologies, and photoluminescence (PL) with high intensities and narrow half-widths (41–43 meV at 300 K). The dislocation etch pit densities ρ of Ga0.65In0.35P and Ga0.69In0.31P epilayers were 7.4–8.6×104 cm−2, grown lattice matched to GaAs1−yPy ( y=0.30, 0.39) substrates with ρ=6.4–7.5×105 cm−2. The degradation of PL intensity after annealing at temperatures between 400 and 600 °C in H2 or N2 indicates an increase in the surface recombination velocity for GaInP epilayers. Etching 30 A(ring) from the surface was found to restore the original PL intensity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337308
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of band offsets and effective masses in quantum wells using optical data (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 612-618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A type-I semiconductor quantum well inherently consists of two quantum wells, one each in the conduction and valence bands. A new method to decouple and independently analyze these two wells is presented. The interband 3e-3h and 1e-1h transitions are decoupled by using the commonly observed 1e-3h transition. The resulting intraband 3h-1h and 3e-1e transitions are used to independently estimate the band offset and carrier mass in each well. Decoupling of the wells in each band adds a degree of freedom to the problem and allows an independent calculation of the average well width to be made. In addition, an accurate linear approximation is developed for use in place of the usual trigonometric solution to the quantum-well problem. For Al0.30Ga0.70As/GaAs quantum wells, results are found to be highly consistent with Qc =0.605, and m@B|hh =0.321 and m*e =0.0671 in the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343092
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence study of confined electron hole plasma in GaxIn1−xAs heterostructures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 948-953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-energy photoluminescence (PL) emission is observed in GaxIn1−xAs heterostructures. The emission originates from an electron-hole plasma (EHP) confined in a 500 A(ring) GayIn1−yAs layer between the InP substrate and a wider band gap GaxIn1−xAs layer. A line-shape analysis of the EHP emission yields electronic temperatures which essentially coincide with the bath temperature. Linear polarization of the PL was observed which indicates a degree of strain in the confining layer. Studies in a magnetic field indicate that the carrier transport in the heterostructure studied is via free carriers and not via excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336171
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  • 8
    Electronic Resource
    Electronic Resource
    Doping studies of Ga0.5In0.5P organometallic vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 395-398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped Ga0.5In0.5P has been successfully grown by organometallic vapor-phase epitaxy on GaAs substrates with a free-electron concentration of 1016 cm−3 and a mobility of 1050 cm2/V s in nominally undoped material. The distribution coefficient of indium in the growth of Ga0.5In0.5P is nearly to unity. Both n- and p-type carrier concentrations of up to 1019 cm−3 have been obtained in the present study. Diethyltelluride and silane are used as n-type dopants. Dimethylzinc is used as the p-type dopant. Te is a very efficient dopant with a distribution coefficient kTe=54. The photoluminescence (PL) intensity increases with Te doping level to a maximum at n=2×1018 cm−3. The silicon distribution coefficient is temperature dependent, due to the incomplete pyrolysis of silane at the growth temperature. Si-doped Ga0.5In0.5P has a lower PL efficiency than Te-doped samples and is not strongly correlated with carrier concentration. The incorporation efficiency of Zn is low, with kZn =3.8×10−3, due to the high vapor pressure of Zn at the growth temperature. The PL intensity of Zn-doped Ga0.5In0.5P also increases with Zn doping level to a maximum at p=2×1018 cm−3 and is comparable to the optimum Te-doped n-type Ga0.5In0.5P. Only a single band-edge PL peak is observed in all cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336642
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  • 9
    Electronic Resource
    Electronic Resource
    Doping superlattices in GaP (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1533-1536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atmospheric pressure organometallic vapor-phase epitaxy was used to grow GaP doping superlattices. Measurements are reported for the first doping superlattice with a band gap which is indirect in both real space and k space. The first observations of phonon replicas in a n-i-p-i photoluminescence (PL) spectrum and a n-i-p-i-like PL peak coming from donor–acceptor transitions are also reported. Large energy shifts of 60 meV per decade of excitation intensity have been observed. The n-i-p-i peak intensities increased linearly with excitation intensity, and the bound exciton peak intensities increased superlinearly, at low illumination intensity, as expected for a periodically modulated space-charge potential. The distribution coefficients for Te and Zn in GaP were found, at 630 °C, to be 34 and 3.0×10−3, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338086
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  • 10
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxial growth of AlGaInP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1380-1383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGayIn1−x−yP with x+y=0.51, lattice matched to the GaAs substrate, has been grown by organometallic vapor phase epitaxy. The simple, horizontal, IR heated system operates at atmospheric pressure using the reactants TMAl, TMGa, TMIn, PH3, and H2. Alloys giving room temperature, band edge photoluminescence (PL) have been grown in the temperature range 625–780 °C. Emission wavelengths as short as 5820 A(ring) (2.13 eV) are reported. High growth temperatures are found to give layers with the best surface morphology and PL intensity. The use of high temperatures is especially important for high Al content alloys. PL at x=0.2 is obtained only for temperatures above 740 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334491
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