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  • 1985-1989  (3)
  • 1980-1984  (2)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1862-1864 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown dilutely doped with Si by molecular beam epitaxy (MBE) with modulated-source supplies have been characterized using low-temperature photoluminescence. Free- and bound-exciton emissions were observed in the near-band-edge region of photoluminescence spectra. A change in the spectral features of impurity-related emissions was induced by varying the modulation of the Si molecular beam in the MBE growth. It is found that the Si atoms are incorporated as either donors or acceptors, according to the timing of the Si supply during the As-source supply in MBE growth. We achieved Si doping on addressed sites by varying the timing of the Si supply.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2382-2386 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first-order Raman scattering from heavily doped and highly compensated GaAs:Si has been measured with a constant impurity concentration of 1.1 × 1019 cm−3. The damped q=0 L− and L+ branches due to the compensation-limited low mobilities have been observed. The impurity-induced forbidden mode which had been found in uncompensated p-GaAs:Zn has not appeared in the measured spectra. The line-broadening of plasmon-coupled LO phonon, L(q), and line and peak shift of TO phonon line are attributed to the impurity-induced Fröhlich interaction and the self-energy effect, respectively.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 10-12 (Jan. 1986), p. 1201-1206 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 2029-2033 
    ISSN: 0392-6737
    Keywords: Photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro si studiano gli spettri di fotoluminescenza di cristalli singoli di LiInS2 e LiInSe2. Si verifica, tramite misurazioni ESR, che l'origine della colorazione e dell'emissione profonda a 460 nm su LiInS2 è dovuta a ioni Fe3+. La cosiddetta «emissione presso l'estremità della banda» è stata osservata a 600 nm e a 77 K su monocristalli LiInSe2 giallo chiaro. Si è mostrato che il LiInSe2 rosso ha una struttura di banda a coda con impurità residue ad alta densità, attraverso un confronto tra i risultati delle misurazioni elettriche e di fotoluminescenza. Alcume emissioni profonde sono ottenute su LiInSe2 giallo e rosso.
    Abstract: Резюме В этой работе исследуются спектры фотолюминесценции монокристаллов LiInS2 и LiInSe2. С помощью ESR измерений показывается, что природа окраски и глубина излучения при 460 нм в LiInS2 связана с ионами Fe3+. Наблюдается так называемое излучение на «краю зоны» с длиной волны 600 нм при 77 К в светло-желтых монокристаллах LiInSe2. Сравнение результатов электрических и фотолюоминесцентных измерений показывает, что красный LiInSe2 имеет зонную структуру при высокой плотности остаточных примесей. На желтых икрасных монокристаллах LiInSe2 получены глубокие излучения.
    Notes: Summary The photoluminescence spectra of LiInS2 and LiInSe2 single crystals are investigated in this work. The origin of the coloration and deep emission at 460 nm on LiInS2 is estimated through ESR measurements to be due to Fe3+ ions. The so-called «near-band-edge emission» was observed at 600 nm and at 77 K on the light yellow LiInSe2 single crystals. Through a comparison between the results of electrical and photoluminescence measurements it is shown that the red LiInSe2 has a tailing band structure with high-density residual impurities. Some deep emissions are obtained on yellow and red LiInSe2.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1723-1727 
    ISSN: 0392-6737
    Keywords: Methods of thin-film deposition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono stati preparati film di LiInSe2 di tipop con il metodo di evaporazione rapida su Si di tipon e GaP di tipon. Sono state usate varie tecniche di caratterizzazione come l'analisi con raggi X, l'analisi dello scattering all'indietro di Rutherford (RBS) e la microscopia elettronica di scansione per valutare la qualità dei film. Si dimostrano le rettificazioni delle eterogiunzioni preliminari.
    Abstract: Резюме Приготовляются пленки LiInSe2 p-типа методом быстрого испарения на Sin-типа и GaPp-типа. Для оценки качества плчества пленок используются различные методики: рассеяние рентгеновских лучей, обратное резерфордовское рассеяние, сканирующая электронная микроскопия. Демонстрируется выпрямяюшее действие гетеропереходов.
    Notes: Summary p-type LiInSe2 films have been prepared by the rapid evaporation method onn-type Si andn-type GaP. Various characterization techniques such as the X-ray analysis, the Rutherford backscattering (RBS) analysis and the scanning electron microscopy were used to evaluated the quality of the films. The rectifications of the preliminary heterojunctions are demonstrated.
    Type of Medium: Electronic Resource
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