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  • 1985-1989  (25)
  • 1975-1979  (4)
  • 1
    Electronic Resource
    Electronic Resource
    A convenient synthesis of 2,3-dihydrothiophene (1986)
    s.l. : American Chemical Society
    The @journal of organic chemistry 51 (1986), S. 113-114 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00351a029
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Immunoblot Analysis of Exospore Polypeptides from Some Entomophilic Microsporidia (1986)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 33 (1986), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: . Immunological relationships between genera and species of microsporidia were examined by immunoblot analysis. Exospore polypeptides from two Nosema spp., three Vairimorpha spp., and two undescribed Vairimorpha-like isolates were analyzed. Gel electrophoresis and immunoblot analysis revealed that a variety of polypeptides, mostly between 15,000 and 90,000 molecular weight, are present on the exospore. The three Vairimorpha spp. are closely related immunologically to each other, but less so to the two undescribed Vairimorpha-like isolates. The two Nosema spp. are immunologically distant from each other and from the Vairimorpha spp. Indirect evidence, however, indicated that many internal spore polypeptides present in both genera are similar. Cross-reactivity between exospore polypeptides from entomophilic microsporidia and antisera to a mammalian microsporidium, Encephalitozoon cuniculi, was very limited. These results indicate that immunoblot analysis of exospore polypeptides may be employed to investigate the interrelatedness of microsporidian species, and that exospore polypeptides of some microsporidia are sufficiently diverse to be of immunodiagnostic value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.1986.tb05548.x
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy-like structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy -like structure was observed. Single-phase samples, tetragonal in structure with a=0.380±0.001, c=1.195±0.001 nm, and of P4/mmm space group, were prepared. The results represent the first case where Ce substitution significantly raised the Tc of a known compound. The samples were remarkably homogeneous both in composition and structure. The compounds were highly reproducible and stable. The preparative conditions were found to be much less stringent than those of other copper-based high Tc superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101536
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    New shallow donors in high-purity silicon single crystal (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2084-2086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution photothermal ionization spectroscopy has been performed on n-type high-purity silicon crystals. Two new shallow donors with binding energies of 36.61 and 36.97 meV, respectively, are observed for the first time, in addition to lithium (Li), lithium-oxygen complex [D(Li,O)], phosphorus (P), and arsenic (As) donors. These new shallow donors show similar spectral features to Li, D(Li,O), P, and As, which implies that they are also hydrogenic shallow donors. These new complex centers are probably generated during crystal growth. In addition, previously unresolved transitions related to very high excited states of phosphorus as well as the above-mentioned new shallow donors, have also been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102090
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Deep states and misfit dislocations in indium-doped GaAs layers grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2258-2260 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of adding small amounts of indium (0.6 at. %) in GaAs layers grown by molecular beam epitaxy on GaAs substrates. Photoluminescence spectra showed that epilayers of high crystal quality were obtained, and electron beam induced current microscopy revealed a number of misfit dislocations near the interface and a dislocation-free zone near the top surface. We observed several well known deep traps in the dislocation-free zone, albeit at much lower concentrations in comparison to indium-free, otherwise identical epilayers. We failed to observe any traps in the misfit dislocation zone. If, as is widely held, we assume that these traps are due to point defects and their complexes, a possible explanation of the absence of traps in the dislocation zone is that the traps provide the point defects necessary for the creation and climb of the misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99530
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of substrate photoexcitation on channel conduction in a modulation-doped AlxGa1−xAs/GaAs heterostructure (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2488-2494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: If a modulation-doped AlGaAs/GaAs heterostructure is illuminated by light, photoexcitation of deep levels in the GaAs substrate leads to some interesting effects. Below 100 K, the heterostructure shows a persistent photoconductivity effect. Moreover, a strong persistent channel depletion is observed at low temperatures when a small negative voltage is applied to the substrate contact (backgate). The latter effect is explained by a double-layer model of GaAs where the GaAs side of the heterostructure consists of (1) a buffer layer and (2) a semi-insulating substrate. Under illumination, most of the applied negative voltage drops across the very thin buffer layer, and the enhanced electric field in the layer exerts a very strong influence on the conducting channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341630
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties of ion-beam sputter-deposited Fe-Ni-B-Si films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4315-4317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have produced Fex-Ni80−x -B15-Si5 (x=20, 40, and 75) and permalloy thin films on a silicon substrate using ion-beam sputtering technique. Four-point probe measurement indicated that quarternary films had 3–4 times higher resistivity than permalloy films, and this ratio was not changed after thermal annealing. The values of saturation magnetization were determined to be 5–13 kG depending on Fe concentration. The anisotropy fields of these films were in the ranges of 2–15 Oe after deposition, however, these values were reduced by more than 50% after annealing with field. The lowest value of the anisotropy field was 1.3 Oe for the permalloy film after thermal annealing without field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340213
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    R&D in the People's Republic of China (1986)
    Oxford, UK : Blackwell Publishing Ltd
    R & D management 16 (1986), S. 0 
    Details
    ISSN: 1467-9310
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: Since her founding in 1949, China has gone a long way in formulating her own R&D structure and policy. There are successful stories and painful lessons as well. In this paper the author intends to examine the evolution of the Chinese R&D structure and policy; the pros and cons with this structure and policy. And finally how China is at present reforming the structure and policy, and why she is doing so.Structure and policy are two of the key factors that affect the effectiveness of R&D. With appropriate structure and policy, R&D will not only advance the state of art of science and technology, but also contribute a great deal to the progress of the society and the prosperity of the nation's economy. Therefore, the main theme of the paper will be concentrated on how China could reform her R&D structure and policy so that R&D can play a bigger role in building up China's economy and modernization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-9310.1986.tb01162.x
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  • 9
    Electronic Resource
    Electronic Resource
    Pressure fluctuations in a gas-solid fluidized bed with a screen (1986)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 25 (1986), S. 284-289 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i200032a046
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Transition-state structure variation in the Diels-Alder reaction from secondary deuterium kinetic isotope effects. The reaction of nearly symmetrical dienes and dienophiles is nearly synchronous (1989)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 111 (1989), S. 9078-9081 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00207a013
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    Paper (German National Licenses)
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