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  • 1
    Electronic Resource
    Electronic Resource
    Quadrupole interaction of 181Ta in anhydrous HfCl4 (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1798-1800 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Nuclear quadrupole interaction parameters have been determined at 293 and 77 K at the site of 181Ta nuclei in anhydrous HfCl4 by the method of time-differential perturbed angular correlations. Measurements performed on the 133–482 keV γ–γ cascade in 181Ta following the β decay of 181Hf indicate that HfCl4 does not possess cubic symmetry as claimed by some researchers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455126
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  • 2
    Electronic Resource
    Electronic Resource
    A new method for fetal weight estimation using real-time ultrasound (1987)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 94 (1987), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. A method for estimating fetal weight by calculating an approximate fetal volume from abdominal area, head area and femur length has been developed. Birthweights were calculated within 48 h before delivery for 434 patients, using this method and two other methods already in widespread use. Statistical analysis of the three sets of predictions gave standard deviations of 297 g for the new method, compared with 323 g and 342 g for the other methods. Further analysis of the data showed that estimates closest to the true birthweight were obtained in 41% of cases by using the new method, and in 33% and 26% of cases using the other methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1987.tb02335.x
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  • 3
    Electronic Resource
    Electronic Resource
    COMPETITION BETWEEN PERENNIAL RYEGRASS AND MEADOW FESCUE UNDER FIELD-PLOT CONDITIONS (1964)
    Oxford, UK : Blackwell Publishing Ltd
    Grass and forage science 19 (1964), S. 0 
    Details
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Perennial ryegrass and meadow fescue were grown alone and in association in field plots, to gain an idea of the nature and importance of the competitive interactions between them, and their relative contributions to the yield of the newly-established sward.Experiments over 10 weeks and 9 months both showed that the contribution by fescue to the overall dry-matter yield was severely restricted by perennial ryegrass. There were no deaths of fescue plants during the experimental period (which included an overwintered treatment). The depression in yield was rather a result of a marked decrease in size and weight of the individual plants, brought about by competition for light and nutrients from the faster-growing ryegrass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2494.1964.tb01136.x
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  • 4
    Electronic Resource
    Electronic Resource
    The Chemistry of Some Derivatives of the 7-Oxabicyclo[2.2.1]heptene System, Especially the Epoxy Derivatives (3,8-Dioxatricyclo[3.2.1.02,4]octanes1 (1962)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 84 (1962), S. 4115-4125 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00880a030
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  • 5
    Electronic Resource
    Electronic Resource
    Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2121-2123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin strained superlattice (TSSL) concept is introduced as a means for extending the practical range of application for pseudomorphic Inx Ga1−x As on GaAs. Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with GaAs-In0.3 Ga0.7 As TSSL active layers grown by molecular beam epitaxy. The TSSLs are composed of three periods of GaAs(15 A(ring))- In0.3 Ga0.7 As(h2 ), where h2 ranges from 30 to 52 A(ring). Modulation doping of the TSSLs is provided by atomic planar-doped Al0.3 Ga0.7 As overlayers with 45 A(ring) undoped spacers. 77 K Hall effect and transmission electron microscopy reveal that relatively thick TSSLs can be grown with high electronic and structural quality, comparable to much thinner In0.3 Ga0.7 As single quantum wells. Results are compared with a model for critical layer thickness and discussed in light of in situ reflection high-energy electron diffraction measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101146
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  • 6
    Electronic Resource
    Electronic Resource
    Growth dynamics of aluminum nitride and aluminum oxide thin films synthesized by ion-assisted deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 760-769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some aspects of the dynamics of thin-film synthesis of aluminum nitride and aluminum oxide produced by ion-assisted deposition have been deduced from in situ measurements by ellipsometry, photometry, and ion scattering spectroscopy. Measurements obtained during the etching of aluminum films by nitrogen and oxygen ion beams have established the thickness of the synthesized layer and the rate of compound formation. Some of these measurements have been compared with a theoretical model which predicts the time evolution of the synthesized surface layer as well as the steady-state layer thickness. The breakdown voltage and variation of capacitance with applied voltage of aluminum oxide films prepared by ion-assisted deposition are also presented. Furthermore, the optical properties of ion-assisted AlN and Al2O3 in the visible region are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340068
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  • 7
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy studies of defects in GaAs-AlGaAs superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2882-2885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present preliminary results of a study of defects in GaAs-AlGaAs superlattices using deep-level transient spectroscopy (DLTS). A dramatic difference is observed between the DLTS spectra of two superlattices when the superlattice period is doubled. This is explained by the presence of miniband conduction in the case of the smaller period and its absence in the case of the larger, and by the consequent difference in the distribution of electrons in the superlattice. Observed activation energies must be reinterpreted for comparisons to bulk material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337073
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  • 8
    Electronic Resource
    Electronic Resource
    The structure and properties of ion-beam-synthesized boron nitride films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3980-3986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films containing boron and nitrogen were prepared by electron-beam evaporation of boron and bombardment of the growing film with nitrogen ions of energy up to 1500 eV. Hard films of high transparency (extinction coefficient 〈0.01) were prepared with nitrogen-to-boron atomic arrival ratios greater than one. The optical constants in the visible part of the spectrum were determined as a function of B-to-N atomic ratio in the film and substrate temperature using optical photometry. Measurements of the optical constants were extended to 40 eV using a Kramers–Kronig analysis of electron-energy-loss spectra. Boron-to-nitrogen atomic arrival rates were determined and show that as ion energy and substrate temperature are increased ion flux must be increased to achieve the same stoichiometry. Film structure was imaged using high-resolution electron microscopy, and the radial distribution function (RDF) was determined. The RDF of stoichiometric films showed that high substrate temperatures increased the size of the ordered regions. The RDF and high-resolution imaging of all films were consistent with the presence of the hexagonal form of BN with substoichiometric films containing amorphous boron as the other constituent. This conclusion is consistent with the analysis derived from the sum rule obtained from the optical constants. No evidence could be found for the cubic form of BN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341357
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  • 9
    Electronic Resource
    Electronic Resource
    Analysis of Alcohol Dehydrogenase Gene Expression in Drosophila (1987)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Genetics 21 (1987), S. 203-225 
    Details
    ISSN: 0066-4197
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ge.21.120187.001223
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of growing thin films by in situ ellipsometry, spectral reflectance and transmittance measurements, and ion-scattering spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1995-2003 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile ultrahigh-vacuum thin-film deposition and analysis system is described. Films are deposited by electron beam evaporation with the possibility of ion beam bombardment of the growing film. Measurements of the reflectance and/or transmittance of the coating surface can be made simultaneously at 16 wavelengths across the visible or infrared spectrum. Ellipsometric measurements can also be made in situ, at a single wavelength and single angle of incidence, by an ellipsometer which can operate in either an automatic rotating analyzer mode or a manual nulling mode. The system is also equipped with an ion gun producing a submillimeter spot, and with a hemispherical sector, ion energy analyzer for ion scattering spectroscopy studies of the film surface. Results obtained during the deposition of a gold film are presented to demonstrate the capability of the system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138408
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