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  • 1
    Electronic Resource
    Electronic Resource
    Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2121-2123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thin strained superlattice (TSSL) concept is introduced as a means for extending the practical range of application for pseudomorphic Inx Ga1−x As on GaAs. Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with GaAs-In0.3 Ga0.7 As TSSL active layers grown by molecular beam epitaxy. The TSSLs are composed of three periods of GaAs(15 A(ring))- In0.3 Ga0.7 As(h2 ), where h2 ranges from 30 to 52 A(ring). Modulation doping of the TSSLs is provided by atomic planar-doped Al0.3 Ga0.7 As overlayers with 45 A(ring) undoped spacers. 77 K Hall effect and transmission electron microscopy reveal that relatively thick TSSLs can be grown with high electronic and structural quality, comparable to much thinner In0.3 Ga0.7 As single quantum wells. Results are compared with a model for critical layer thickness and discussed in light of in situ reflection high-energy electron diffraction measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101146
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Bias assisted etching of diamond in a conventional chemical vapor deposition reactor (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1803-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique for selectively etching diamond films is presented. This letter describes a technique by which diamond may be etched in a conventional plasma assisted chemical vapor deposition (CVD) reactor at rates comparable to those reported for both electron cyclotron resonance and reactive ion etching techniques. This technique involves negatively biasing the diamond film, while it is immersed in a mostly hydrogen containing plasma. Negative dc bias assisted etching of CVD diamond films is performed in both microwave and dc plasma reactors over a wide range of temperatures and pressures. Speculation on the etching mechanisms is also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109555
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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