ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Generation of fixed positive charge, neutral electron traps, and fixed negative charge in SiO2 due to exposure to x radiation in the photon energy range below 41 eV from a synchrotron source is reported. For constant incident x-radiation exposure levels of 120 mJ/cm2 with both monochromatic and broadband radiation, the number of defects generated in the monitoring devices was at or below the detection limit of the equipment. This is in sharp contrast with the results obtained at photon energies above 300 eV reported earlier [C. K. Williams, A. Reisman, P. K. Bhattacharya, and W. Ng, J. Appl. Phys. 64, 1145 (1988)] in which a large number of each of the three defects mentioned above were generated. The lack of damage indicates that the problems associated with x-ray-induced insulator damage due to x-ray lithography may be solved by tailoring the photon energy, provided suitable mask and photoresist materials can be developed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343886
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