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  • 1
    Electronic Resource
    Electronic Resource
    Wideband scanning of a guided-light beam and spectrum analysis using magnetostatic waves in an yttrium iron garnet-gadolinium gallium garnet waveguide (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 196-198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wideband scanning of a light beam through the use of magnetostatic waves has been accomplished for the first time. Specifically, a guided-light beam at a wavelength of 1.317 μm in an yttrium iron garnet-gadolinium gallium garnet waveguide was Bragg diffracted by magnetostatic forward volume waves (MSFVWs) operating at a frequency range of 2–7 GHz. Wideband scanning of the light beam was accomplished simply by changing the frequency of the MSFVW continuously from center frequencies of 2.5 and 6.0 GHz while keeping the dc magnetic field fixed or by continuously tuning the dc magnetic field while keeping the frequency of the MSFVW fixed at the center frequencies. A large number of resolvable scan spot positions were obtained in both cases. The resulting wideband magneto-optic Bragg cell or light beam scanner was also used to perform spectral analysis of wideband rf signals at a center frequency of 3.2 GHz. Potential advantages of the magneto-optic Bragg cell and scanner over the existing acousto-optic counterparts also identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101006
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  • 2
    Electronic Resource
    Electronic Resource
    Sound velocity and index of refraction of AlAs measured by picosecond ultrasonics (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2023-2024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use picosecond optics techniques to generate and detect acoustic pulses in an epitaxially grown film of AlAs. From the round trip time of the acoustic pulse we find a sound velocity in the [100] direction of 6.4×105 cm s−1. We also show how measurements of this type can be used to determine the refractive index.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100309
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    GHz bandwidth magneto-optic interaction in yttrium iron garnet-gadolinium gallium garnet waveguide using magnetostatic forward volume waves (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1696-1698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very large bandwidth noncollinear coplanar magneto-optic interaction with magnetostatic forward volume waves in an yttrium iron garnet-gadolinium gallium garnet (YIG-GGG) waveguide is reported for the first time. Bandwidths of 0.78 and 1.03 GHz centered, respectively, at the carrier frequencies of 2.5 and 6.0 GHz, and TM0 -TE0 mode-conversion efficiencies of 0.54 and 0.50% have been achieved at the optical wavelength of 1.317 μm using a single microstrip transducer and homogeneous dc magnetic fields of 2200 and 3500 Oe. A summary of related coupled-mode analysis is also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99800
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-milled lenses and lens arrays in yttrium iron garnet-gadolinium gallium garnet waveguides (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2271-2273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveguide lenses have been formed for the first time in yttrium iron garnet-gadolinium gallium garnet (YIG-GGG) waveguides by using ion milling. Hybrid-type single lenses, lens arrays, and collimation-Fourier-transform lens pairs fabricated have shown good efficiency and near-diffraction-limited focal spot sizes. These waveguide lenses should facilitate realization of magnetostatic wave based integrated magneto-optic device modules for applications in communications and signal processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102035
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  • 5
    Electronic Resource
    Electronic Resource
    X-band magneto-optic Bragg cells using bismuth-doped yttrium iron garnet waveguides (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2242-2244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Guided-wave magneto-optic Bragg cells at X-band microwave frequencies using magnetostatic forward volume waves (MSFVWs) in bismuth-doped yttrium iron garnet-gadolinium gallium garnet (Bi-doped YIG-GGG) waveguides are reported for the first time. Performance figures that have been obtained at an optical wavelength of 1.303 μm include a center frequency tuning range of 3.7–12.0 GHz, a diffraction efficiency of 12% at the magnetostatic wave power of 56 mW, a linear dynamic range 〉40 dB, and a −3 dB magneto-optic bandwidth of 150 MHz. These results represent a significant improvement over those obtained previously with the Bragg cells using pure YIG-GGG waveguides. Maximum scan angle of 6° and 5.3° were also measured, respectively, by tuning the rf frequency ∼10.0 GHz at a fixed dc magnetic field of 3660 Oe and by varying the dc magnetic field ∼3660 Oe at a fixed rf frequency of 10.0 GHz. A frequency resolution of 30 MHz was measured with rf spectral analysis experiments carried out at 12 GHz. Finally, a Faraday rotation coefficient as large as −2313°/cm was measured for the Bi-doped YIG-GGG waveguides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102070
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  • 6
    Electronic Resource
    Electronic Resource
    Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4584-4588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of annealing in vacuum and in controlled low-pressure oxygen ambient on breakdown characteristics of thin (∼500 A(ring)) SiO2 films on Si (100) has been studied under ultrahigh vacuum conditions for temperatures 750–900 °C and controlled O2 partial pressures in the range 10−6–5×10−2 Torr. Dark current-voltage measurements on Al-gate capacitors show that vacuum annealing causes low-field self-healing breakdown by the formation of local defects in the oxide. This degradation of breakdown characteristics is suppressed by the presence of sufficient O2 in the annealing ambient, such that the O2 partial pressure must exceed the SiO equilibrium partial pressure by a factor of ∼100×. This behavior suggests that low-field breakdown is a consequence of oxide decomposition (Si+SiO2→2SiO↑) at defects in the oxide, which is suppressed by reoxidation of the volatile SiO reaction product.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338365
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  • 7
    Electronic Resource
    Electronic Resource
    Measurements of hydrogen in metal-oxide-semiconductor structures using nuclear reaction profiling (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2291-2298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report depth profiles of the hydrogen concentrations in metal-oxide-semiconductor structures measured using the nuclear reaction profiling technique with a 6.4-MeV 15N beam. In both conventionally grown and ultra-dry thermal oxide samples with aluminum or gold gate metal, a peak of hydrogen concentration is observed at the metal/SiO2 interface. The amount of hydrogen at this interface varied from sample to sample in the range 2–6×1015 H/cm2, which was at least 20 times as much as in the SiO2 layers. By continued irradiation with the measuring beam, most of this hydrogen was detrapped from the metal/SiO2 interface and diffused into the SiO2. The detrapping occurred much more rapidly in samples made with Al metallization than in Au gate or unmetallized samples. The data can be fitted by a model in which hydrogen is detrapped from the metal/SiO2 interface by the beam, then diffuses into the SiO2. Redistribution of hydrogen was found to continue until it was uniformly distributed throughout the SiO2, with a residual peak of strongly trapped hydrogen remaining at the metal/SiO2 boundary. At the same time the concentration of hydrogen in the SiO2 increased from an initial low level to about 4×1020 cm−3, depending on the amount of hydrogen initially at the Al/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341043
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  • 8
    Electronic Resource
    Electronic Resource
    Hole trapping in SiO2 films annealed in low-pressure oxygen atmosphere (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 925-930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of hole traps in thermal SiO2 films on Si(100) has been characterized as a function of O2 partial pressure in the annealing ambient in order to address the chemistry associated with the hole traps. The annealing treatments were carried out in ultrahigh vacuum (base pressure∼5×10−9 Torr) without and with the presence of an intentional (controlled) partial pressure of O2 in the range 10−6–5×10−2 Torr. Hole trapping was characterized using the avalanche injection technique. Annealing in vacuum results in an increased hole trapping rate similar to that observed for high-temperature (T〉900 °C) furnace annealing in N2. The hole trapping is reduced upon annealing in O2 containing ambients if the O2 partial pressure exceeds the SiO vapor pressure by at least one order of magnitude. Thus, the presence of sufficient O2 in the postoxidation annealing process suppresses hole trapping. These results appear analogous to the reduction in low-field breakdown when O2 is present, as recently reported. In both cases, it is likely that the O2 serves to reoxidize a defect related SiO product which is generated by Si-SiO2 reaction at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339702
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Optical and electronic properties of the electron beam resist poly(butene-1-sulfone) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4360-4364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of thin films of poly(butene-1-sulfone), PBS, an electron beam resist, are presented for the range of photon energies from 2.5 to 39.0 eV. The density of these films is found to be (1.39 ± 0.02) g cm−3. A sum-rule calculation is used to demonstrate the overall consistency of the data obtained. The optical data are used to calculate inelastic electron mean-free paths in PBS as a function of incident electron energy from 100 to 10 000 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335525
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  • 10
    Electronic Resource
    Electronic Resource
    Diagnostics of space plasmas (invited) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1711-1716 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Diverse plasmas have been observed in the magnetospheres of Earth and other planets, and in interplanetary space. Recently, measurements were made by a space probe at Comet Giacobini–Zinner. In these various plasma regimes investigated during the space era, plasma characteristics vary widely: particle densities range from 〈0.01 to 1000 per cc, energies from 〈1 eV to many MeV, temperatures from 〈1 eV to 〉1000 eV, and bulk flow speeds from near stationary to 〉1000 km/s. A variety of plasma-wave activity and instabilities characterize these plasmas. The measurements are made with several different generic types of instruments including electrostatic analyzers and systems which combine electrostatic analysis with time-of-flight or magnetic analysis in order to identify ions and their charge states. This paper outlines the plasma regimes found in space, discusses instrument design principles and constraints imposed by limited spacecraft resources, describes a few instruments, and highlights a small selection of scientific results derived from diagnostics of space plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138558
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