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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1346-1351 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69) are described in this paper. The organometallic vapor-phase epitaxial (OMVPE) growth was carried out in an atomospheric pressure reactor using trimethylgallium (TMGa), trimethylindium (TMIn), and phosphine (PH3). GaAs and commercially available hydride vapor-phase epitaxial GaAs0.70P0.30 and GaAs0.61P0.39 were used as the substrates. The influence of growth temperature and V/III ratio on the properties of the OMVPE epilayers was studied. This resulted in the determination of an optimum growth temperature of 625 °C and an optimum V/III ratio range of 40–50. The results of the mismatch due to the different lattice constants of the GaxIn1−xP epilayer and the substrate were investigated. It was found that high-quality GaxIn1−xP epilayers can be obtained only when the mismatch ||Δa/a0|| is less than 1×10−3. Under the conditions mentioned above, epilayers were reproducibly obtained with featureless surface morphologies, and photoluminescence (PL) with high intensities and narrow half-widths (41–43 meV at 300 K). The dislocation etch pit densities ρ of Ga0.65In0.35P and Ga0.69In0.31P epilayers were 7.4–8.6×104 cm−2, grown lattice matched to GaAs1−yPy ( y=0.30, 0.39) substrates with ρ=6.4–7.5×105 cm−2. The degradation of PL intensity after annealing at temperatures between 400 and 600 °C in H2 or N2 indicates an increase in the surface recombination velocity for GaInP epilayers. Etching 30 A(ring) from the surface was found to restore the original PL intensity.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4937-4941 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-spin resonance (ESR) has been used to monitor the growth of aluminum-associated trapped-hole centers (i.e., [AlO4 ]0 centers) in high-purity cultured quartz during a sequence of irradiations with 1.7-MeV electrons. Production curves were obtained at three dose rates (3.6, 36, and 360 krad/min) for a series of crystals furnished by three commercial growers of quartz. The shape of each curve depended directly on the dose rate and the origin of the quartz; many of them had an initial rapid growth to a maximum concentration followed by a 5%–25% decrease as the number of defects approached an equilibrium value at a higher dose. We suggest that the complex shapes of these defect production curves, and also their variation between samples, is caused by a competition between the formation of [AlO4 ]0 centers and the formation of [AlO4 /H+ ]0 centers. At higher dose rates, in the 4–40 Mrad/min range, no dependence on dose rate was observed.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 136-141 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number of oxygen atoms in a thermal donor (TD) can be determined directly from the reduction of the concentration of interstitial oxygen in Czochralski (Cz) silicon after annealing at 450 °C for 75 h, when the effect of high-carbon concentration in Si crystals is considered. It is found that on the average a single TD cluster contains eight oxygen atoms. Some TD-inactive large oxygen clusters are produced if the annealing time is longer than the time for TDs to reach their maximum concentration or if the annealing temperature is higher than 475 °C. We also find that the smallest TD cluster contains five oxygen atoms and the largest TD cluster contains 13 oxygen atoms.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1686-1688 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsP double-channel–planar-buried-heterostructure lasers with stop-cleaved mirrors emitting at 1.3 μm have been fabricated. Threshold currents as low as 18 mA and differential quantum efficiencies as high as 39% have been obtained. Furthermore, we have achieved a yield greater than 50% in obtaining good quality facets utilizing the stop-cleaving technique. Our result represents one of the lowest threshold currents obtained so far at 1.3-μm wavelength among the structures designed for monolithic optoelectronic integration.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 5429-5441 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two-photon transitions have been examined in argon, krypton, xenon, and molecular hydrogen using a coherent vacuum ultraviolet (VUV) photon at a fixed wavelength of 118 nm and a tunable photon from a dye laser. The 118 nm VUV photon is produced by third harmonic generation in xenon using UV light at 355 nm from a frequency tripled Nd:YAG laser. Though the VUV intensity is very weak, (∼100 nJ per pulse) it was utilized very efficiently since most of VUV photons in the ionization region were absorbed. Spectra were obtained in the region of 12.5 to 13.5 eV and the corresponding two-photon rate constants were calculated. This is the first time that coherent VUV light has been employed with tunable visible light for the production of two-photon spectra and the measurement of two-photon rates. The two-photon ionization rate of xenon was measured using photons at fixed wavelengths of 118 and 355 nm. A new parameter is proposed for direct comparison of the data from various two-photon experiments.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 5925-5933 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The polarized absorption spectra of oriented films of phase-I and phase-II poly(di-n-hexylsilane), PDHS, have been determined in the visible/UV and in the near-edge regions of the C 1s and Si 1s x-ray ionization potentials. The phase-I absorption band at 360 nm is strongly polarized parallel to the direction of the Si chain, whereas the analog of this band in phase II (317 nm) is only weakly polarized in the same direction; this is consistent with partial trans→gauche isomerization of the Si chain in phase II and delocalization of the excitation in part onto disordered n-hexyl groups. Polarized absorption in the vicinity of the Si 1s ionization limit reveals strong polarization of the discrete and continuum transitions in both phase I and phase II, whereas the equivalent spectra taken in the vicinity of the C 1s limit show strong polarization in phase I but little or no polarization in phase II. The x-ray spectra are interpreted as showing that the Si chain and the n-hexyl groups of the polymer are ordered in phase I and are essentially perpendicular to one another, whereas in phase II the n-hexyl chains are disordered while the Si backbone remains relatively fixed in space. The Si 1s electron-yield spectra also display EXAFS interferences which have been transformed to yield Si–Si and Si–C distances in the polymer of 2.37±0.02 and 1.81±0.03 A(ring), respectively. The various discrete and continuum transitions are assigned according to an orbital model, and the visible/UV thermochromism earlier reported for PDHS is now observed in the Si 1s x-ray near-edge spectrum as well.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 4671-4677 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two-photon cross sections of neat benzene and methyl substituted benzenes at various wavelengths for selective excitation were measured by two-photon induced fluorescence spectra for the first time. The results show that the two-photon rate increases rapidly with the frequency of the photon.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2585-2592 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Total ionization and attachment cross sections have been measured in C3F8 at 330 K using an electron beam and a total ion collection technique, calibrated by similar measurements on N2O and Xe. Our total ionization cross section is similar in general shape to a previous measurement of this type, but with typically half the magnitude. The ionization threshold cannot be accurately derived from these measurements, due to severe upward curvature immediately above threshold. The positive-ion signal rises above the background at 13.0±0.1 eV, to be regarded as a lower limit to the true threshold. An overall ionization cross section with a threshold at 13.3 eV is recommended, based on threshold data from photoelectron spectroscopy and the present data between 14 and 80 eV. The room temperature total attachment cross section peaks at 2.8 eV with a value of 1.75×10−17 cm2. This is 14 times smaller than the only other measurement of this type we are aware of. There is much better agreement with two more recently reported values unfolded from swarm experiments. The temperature dependence of the predominant dissociative attachment process, involving F− production, was studied in a different apparatus using a mass filter and ion pulse counting. At 730 K the peak cross section has increased by ∼60% and the threshold is lower by 1.1 eV. This second type of measurement was used to study the predominant dissociative attachment process in C2H3Cl, involving Cl− production. At 290 K this has a threshold at 0.85 eV and a peak at 1.35 eV of 3.2×10−17 cm2, in good agreement with recent work elsewhere. At 850 K the cross section at the peak is 2.6 larger, and lower in energy by 0.33 eV, while at 0 eV it has reached 6×10−18 cm2. At higher temperatures effects ascribed to thermal dissociation of the C2H3Cl were observed. The implications of the present results regarding the use of these gases in diffuse discharge switches are discussed.
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 31 (1988), S. 137-148 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The theory for the dissipative trapped particle modes is developed for a tandem mirror taking into account equilibrium rotational effects, electron temperature gradients, and an axial ambipolar potential, for a broad range of collisional parameters. The electrons are treated as a Maxwellian plasma that occupies the central cell and anchor cell regions. It is assumed that the eigenfunction is piecewise constant with abrupt transitions between the anchor and central cell regions. It is found that when ω/νp(approximately-greater-than)1, with ω the mode frequency and νp the Pastukhov loss rate, that the energy conservation structure of the collision operator produces important changes to previously developed theories. A solution to the problem is achieved by using the solution for the lifetime of an electron in an ambipolar trap, taking into account the global energy conservation. The energy conservation structure also allows a self-consistent description of dissipative instabilities when thermal gradient and electric fields are present. At very high collision frequency, a new dispersion relation is obtained, which exhibits an axially rotational shear drive coupled to radial temperature gradients producing instability. Numerical studies are presented for some parameters, with the deviation from previous theory highlighted.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 29 (1986), S. 1367-1372 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stability of convective motion in a variable-viscosity fluid contained in an infinite vertical slot generated by a lateral temperature difference was studied by means of linear stability analysis. The viscosity of the fluid was assumed to be an exponential function of the temperature. The undisturbed steady-state motion was assumed to consist of purely vertical motion with a linear temperature distribution across the slot. The linear stability equations were solved by the Galerkin method. The results show that (i) the onset of instability is in the oscillatory, or traveling wave, mode in fluids whose mean Prandtl number is greater than 25, and (ii) the variable-viscosity fluid is less stable than the constant-viscosity fluid at the same mean Prandtl number when it exceeds 100.
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