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  • 1985-1989  (5)
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Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Chemisorption-induced reflectivity changes in optically thin silver films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1471-1473 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The reflectivity of an optically thin metal film has been used to investigate its interactions with chemisorbed molecules. Reflectivity decreases for semitransparent, thin (50–250 A(ring)) silver films vacuum evaporated on the end of multimode optical fibers were observed at 860 nm during chemisorption of various molecules. The magnitude of the decrease depends on the nature of the molecule/silver interaction. The dependence of this effect on film thickness is consistent with changes in the optical thickness as a result of chemisorption. This effect may lead to the development of new chemical sensors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100464
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  • 2
    Digitale Medien
    Digitale Medien
    Hydrogen sensing with palladium-coated optical fibers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3706-3712 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Palladium-coated, single-mode optical fibers have been used to detect hydrogen in a concentration range 20 parts per billion to 2% in 1 atm of nitrogen. When the coated fibers are exposed to hydrogen, a hydride is formed with an expanded lattice constant, which stretches the optical fiber. This change in optical path length is measured using a Mach–Zehnder interferometer. A simple one-dimensional model is presented and shown to accurately reproduce the fiber response. Using electrodeposited palladium films, a factor of 7 enhancement in the hydrogen solubility is observed, as well as a deeply bound site which is saturated in the parts per million concentration range. The data suggest that this site may be due to hydrogen binding to a free surface of the palladium.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341414
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  • 3
    Digitale Medien
    Digitale Medien
    Equilibrium properties of thin-oxide metal-oxide-semiconductor diodes (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2137-2141 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The zero-bias resistance and high frequency capacitance of Al- and Pd-gated thin-oxide metal-oxide-semiconductor diodes have been measured as a function of temperature. The temperature dependence of the semiconductor barrier height is found to be large, primarily due to inversion effects. The relatively low activation energies observed for the zero-bias resistance, as well as actual measurements of spatial variations in device current, strongly suggest the presence of large variations in the semiconductor band bending. These variations may be directly related to thickness nonuniformities which are known to occur in SiO2 films processed at low temperatures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337166
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  • 4
    Digitale Medien
    Digitale Medien
    Mechanism of hydrogen sensing in Pd-Si metal-insulator-semiconductor diodes (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2044-2050 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Capacitance, conductance, and photoinduced current measurements have been made on Pd-Si metal-insulator-semiconductor diodes to define the mechanism by which these devices sense hydrogen. The results have been used to construct a model which is capable of describing the major features of the response of these diodes to hydrogen. The current flow is found to be majority carrier dominated, through interface states at the SiO2-Si interface. Changes in current under reverse bias upon exposure to hydrogen result from lowering of both the Schottky barrier and the oxide barrier height but not from changes in the interface density of states.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336013
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  • 5
    Digitale Medien
    Digitale Medien
    Genotoxicity assessment of atrazine and some major metabolites in the ames test (1989)
    Springer
    Bulletin of environmental contamination and toxicology 43 (1989), S. 797-804 
    Details
    ISSN: 1432-0800
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Energietechnik , Medizin
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01702047
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