Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Lattice location of hydrogen in Mg doped GaN (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 108-117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used ion channeling to examine the lattice configuration of hydrogen in Mg doped wurtzite GaN grown by metal organic chemical vapor deposition. Hydrogen is introduced by exposure to hydrogen gas or electron cyclotron resonance plasmas and by ion implantation. A density functional approach including lattice relaxation was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Results of channeling measurements are compared with channeling simulations for hydrogen at lattice locations predicted by the density functional theory. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377609
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Grain Boundaries in Polycrystalline Silicon (1985)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 15 (1985), S. 271-302 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.15.080185.001415
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Charge state control of hydrogenation in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 151-155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that periodic exposure to zero bias during in situ hydrogenation of reverse-biased p-type Schottky barrier structures has dramatic effects on H penetration. H influx can be slowed or even stopped by such protocols. By contrast, similar pulsing techniques produce almost no changes of penetration in n-type barriers during hydrogenation; this latter observation is in sharp contrast to the expectations that charge conversion from H+ to H− would reverse the drift of H species. We suggest that these effects are caused by the charge conversion of relatively immobile H-related defects. In the p-type barriers this results in a weakening or reversal of the near surface electric field, effectively stopping the drift of H+ into the bulk. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362825
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electric field control of cathodoluminescence from phosphors excited at low electron energies (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 85-87 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that electric fields applied across phosphor layers strongly influence the cathodoluminescence emitted from these materials at low electron beam energies. The magnitude of these effects suggest that the primary mechanism may be alteration of the relative capture rates of electrons and holes at surface or near-surface defect sites associated with nonradiative energy losses. The sign of these effects in the two materials investigated suggests that the rate limiting step at low electric fields is the capture of electrons. Strong evidence for field-induced polarization and trapping of the beam-created electron-hole pair population is also presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121732
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Crosslinked polyimide electro-optic materials (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5876-5883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of the optical and electro-optic properties of guest–host polymeric nonlinear optical materials based on aromatic, fluorinated, fully imidized, organic soluble, thermally, and photochemically crosslinkable, guest–host polyimides. We have introduced temperature stable nonlinear optical chromophores into these polyimides and studied optical losses, electric field poling, electro-optic properties, and orientational stability. We measured electro-optic coefficients of 5.5 and 12.0 pm/V for ((2,6-Bis(2-(3-(9-(ethyl)carbazolyl))ethenyl)4H-pyran-4-ylidene)propanedinitrile (4-(Dicyanomethylene)-2-methyl-6-(p -dimethylaminostyryl)-4H-pyran) DCM-doped guest–host systems at 800 nm using a poling field of 1.3 MV/cm. Poling induced nonlinearities in single-layer films were in agreement with the oriented gas model, but were lower in three-layer films due to voltage division across the layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360779
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Loss mechanisms in polyimide waveguides (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2505-2508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveguide losses in thin film polyimides using waveguide loss spectroscopy and photothermal deflection spectroscopy as a function of cure cycle and structure were studied. Fluorinated sidegroups on the polyimide backbone lead to decreases in birefringence and absorption. The primary waveguide loss mechanism is absorption, not scattering. Waveguide losses as low as 0.4 dB/cm at 800 nm have been measured. Losses as low as 0.3 dB/cm at 1300 nm can be inferred from the photothermal deflection spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357610
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Mechanisms behind green photoluminescence in ZnO phosphor powders (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7983-7990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green emission intensity is strongly influenced by free-carrier depletion at the particle surface, particularly for small particles and/or low doping. Our data suggest that the singly ionized oxygen vacancy is responsible for the green emission in ZnO; this emission results from the recombination of a photogenerated hole with the singly ionized charge state of this defect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362349
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Atomic level stress and light emission of Ce activated SrS thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1812-1814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We find that the Ce3+ ion in polycrystalline sputtered SrS:Ce thin films resides in a distorted octahedral environment, as opposed to the cubic host environment. Using electron paramagnetic resonance and x-ray diffraction analysis, we show that the degree of axial distortion is related to the preferential growth direction of the SrS films. To first order, the blue-emission properties (emission wavelength and decay times) of the SrS:Ce films do not appear to be affected by the amount of distortion in the localCe3+ environment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366284
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5138-5143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce3+ sites along with the formation of another type of Ce3+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce3+ sites with VSr shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366547
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5730-5735 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of electron paramagnetic resonance, photothermal deflection spectroscopy, and capacitance-voltage measurements on amorphous hydrogenated silicon nitride (a-SiNx:H) thin films exposed to ultraviolet (UV) illumination. It has been previously shown that exposure to UV light activates silicon dangling-bond defects, i.e., K0 centers, in a-SiNx:H thin films. Here, we demonstrate that the initially UV-activated K0 center can be irreversibly annihilated at long illumination times. Because this effect seems to scale with H content of the measured films, we propose that hydrogen may be passivating the K0 defects during the extended UV exposure. We also show that films subjected to long UV exposures trap charge as efficiently as those having much larger K0 concentrations. A few possibilities to explain this effect are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359593
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...