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  • 1995-1999  (18)
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  • 1
    Electronic Resource
    Electronic Resource
    Binding of cobalt and iron to cavities in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3717-3726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemisorption binding of Co and Fe to cavity walls in Si was quantitatively characterized in the temperature range 973–1273 K in order to evaluate the efficacy of cavities for impurity gettering. The cavities were formed by He ion implantation and annealing. Then, with the solution concentration of Co or Fe being held at the solid solubility through prior formation of excess metal-silicide phase, the equilibrium number of metal atoms bound to the cavities was measured. Using this information in conjunction with published solubilities, a binding free energy relative to interstitial solution was extracted. The binding free energies for cavity-wall chemisorption of Co and Fe were found to be less than those for precipitation of the respective silicide phases, a reversal of the ordering previously observed by us for Cu and Au. Nevertheless, model calculations indicate that the chemisorption mechanism is important together with silicide precipitation for cavity gettering of all four elements. The results of this work, taken with the known thermal stability and the anticipated device-side compatibility of cavities, suggest that these sinks will prove attractive for gettering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363322
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanisms behind green photoluminescence in ZnO phosphor powders (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7983-7990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green emission intensity is strongly influenced by free-carrier depletion at the particle surface, particularly for small particles and/or low doping. Our data suggest that the singly ionized oxygen vacancy is responsible for the green emission in ZnO; this emission results from the recombination of a photogenerated hole with the singly ionized charge state of this defect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362349
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  • 3
    Electronic Resource
    Electronic Resource
    Local Ce environments and their effects on optical properties of SrS phosphors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7036-7040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we use electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopies to determine the various Ce environments in SrS phosphor materials and how these affect absorption and emission properties. As the Ce concentration is increased from 450 to 7500 ppm, the total EPR-active Ce3+ and optical absorption signals increase linearly with Ce concentration; by contrast, the PL intensity saturates at fairly low Ce concentrations (1000 ppm Ce). We suggest that the nonlinear behavior of the PL arises from the presence of nonradiative deexcitation pathways such as defects associated with Ce sites, or Ce–Ce pairs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363776
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  • 4
    Electronic Resource
    Electronic Resource
    Crosslinked polyimide electro-optic materials (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5876-5883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of the optical and electro-optic properties of guest–host polymeric nonlinear optical materials based on aromatic, fluorinated, fully imidized, organic soluble, thermally, and photochemically crosslinkable, guest–host polyimides. We have introduced temperature stable nonlinear optical chromophores into these polyimides and studied optical losses, electric field poling, electro-optic properties, and orientational stability. We measured electro-optic coefficients of 5.5 and 12.0 pm/V for ((2,6-Bis(2-(3-(9-(ethyl)carbazolyl))ethenyl)4H-pyran-4-ylidene)propanedinitrile (4-(Dicyanomethylene)-2-methyl-6-(p -dimethylaminostyryl)-4H-pyran) DCM-doped guest–host systems at 800 nm using a poling field of 1.3 MV/cm. Poling induced nonlinearities in single-layer films were in agreement with the oriented gas model, but were lower in three-layer films due to voltage division across the layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360779
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  • 5
    Electronic Resource
    Electronic Resource
    Ultraviolet light induced annihilation of silicon dangling bonds in hydrogenated amorphous silicon nitride films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5730-5735 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of electron paramagnetic resonance, photothermal deflection spectroscopy, and capacitance-voltage measurements on amorphous hydrogenated silicon nitride (a-SiNx:H) thin films exposed to ultraviolet (UV) illumination. It has been previously shown that exposure to UV light activates silicon dangling-bond defects, i.e., K0 centers, in a-SiNx:H thin films. Here, we demonstrate that the initially UV-activated K0 center can be irreversibly annihilated at long illumination times. Because this effect seems to scale with H content of the measured films, we propose that hydrogen may be passivating the K0 defects during the extended UV exposure. We also show that films subjected to long UV exposures trap charge as efficiently as those having much larger K0 concentrations. A few possibilities to explain this effect are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359593
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  • 6
    Electronic Resource
    Electronic Resource
    Charge state control of hydrogenation in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 151-155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that periodic exposure to zero bias during in situ hydrogenation of reverse-biased p-type Schottky barrier structures has dramatic effects on H penetration. H influx can be slowed or even stopped by such protocols. By contrast, similar pulsing techniques produce almost no changes of penetration in n-type barriers during hydrogenation; this latter observation is in sharp contrast to the expectations that charge conversion from H+ to H− would reverse the drift of H species. We suggest that these effects are caused by the charge conversion of relatively immobile H-related defects. In the p-type barriers this results in a weakening or reversal of the near surface electric field, effectively stopping the drift of H+ into the bulk. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362825
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  • 7
    Electronic Resource
    Electronic Resource
    Electron-beam-induced charging of phosphors for low voltage display applications (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7994-8001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shifts of the surface potential were measured for several commercial phosphors by monitoring secondary and Auger electron spectra during electron beam irradiation at energies between 0.5 and 5 keV. The insulating phosphors charge strongly negative above 2 keV, whereas the conductive ones do not. This charging behavior is exaggerated after prolonged beam exposure. Measurements using two coincident electron beams to control the surface potential demonstrate that aging-enhanced surface charging decreases the phosphor cathodoluminescence. The dependence of the phosphor surface potential on the voltage applied to the metal plate on which they are deposited was also determined. These data suggest the presence of substantial space charge in the phosphors, even at low electron beam energies where no beam-induced shifts of the surface potentials are seen. We suggest that the electric fields due to these near-surface space charge regions are crucial in altering secondary emission and in establishing a steady state charge balance in the case where no currents can flow from the irradiated phosphor surface to the conductive backplane. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365403
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  • 8
    Electronic Resource
    Electronic Resource
    Electric field control of cathodoluminescence from phosphors excited at low electron energies (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 85-87 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that electric fields applied across phosphor layers strongly influence the cathodoluminescence emitted from these materials at low electron beam energies. The magnitude of these effects suggest that the primary mechanism may be alteration of the relative capture rates of electrons and holes at surface or near-surface defect sites associated with nonradiative energy losses. The sign of these effects in the two materials investigated suggests that the rate limiting step at low electric fields is the capture of electrons. Strong evidence for field-induced polarization and trapping of the beam-created electron-hole pair population is also presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121732
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  • 9
    Electronic Resource
    Electronic Resource
    Luminescence, absorption, and site symmetry of Ce activated SrGa2S4 phosphors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 478-480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ce activated SrGa2S4 blue emitting phosphors were examined using electron paramagnetic resonance and x-ray diffraction to determine the local environment and oxidation state of the Ce ion. Photothermal deflection and photoluminescence spectroscopies were applied to determine absorption and emission characteristics. It is found that the majority of the Ce3+ ions substitute for the eightfold coordinated antiprismatic Sr2+ cations in the structure. Our results show that the Ce ions exhibit C3h symmetry; this suggests that they are ninefold coordinated. This coordination may arise from a nearby S interstitial, energetically favorable because of charge compensation. To achieve this symmetry, only minor rearrangements of the eight S atoms in the antiprismatic configuration are required. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118186
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  • 10
    Electronic Resource
    Electronic Resource
    Impact of Pb doping on the optical and electronic properties of ZnO powders (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1280-1282 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the grains to ≈2 eV with increasing lead content. Both phenomena are at least in part attributed to the formation of a separate PbO-like phase, likely residing at the grain boundaries. The free-carrier concentration in the grains was also observed to decrease with increasing Pb content. Our EPR results suggest that this may be due to electron transfer from oxygen vacancy donors to substitutional Pb centers, acting as electron traps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114397
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