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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 50 (1985), S. 408-410 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1861-1862 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low-pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 913-915 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and microstructures of a high Tc BiSrCaCuO (BSCCO) compound were characterized by transmission electron microscopy, x-ray diffraction (XRD), and energy dispersive spectrometry (EDS). Convergent beam electron diffraction (CBED) analysis established that the crystal is of mm2 symmetry. Combined with electron diffraction, XRD, and EDS data, the high Tc superconducting BSCCO compound was found to be of the Pnn2 space group, orthorhombic in structure with a=0.540 nm, b=2.689 nm, and c=3.040 nm and with an approximate composition of Bi2Sr2CaCu2Oy. Diffraction contrast analysis indicated that the dislocations are predominantly of screw character with [010] or [001] Burgers vectors. However, edge type dislocations and dislocations with [100] Burgers vector were also observed. The magnitude of the Burgers vector along the [100] direction was determined to be 1/2 [100] by high-resolution lattice imaging. Stacking faults and small-angle grain boundaries were frequently observed. The presence of a high density of defects in the superconducting oxide may facilitate the processing of the material and serve as effective flux line barriers.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3119-3142 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the behavior of a hysteretic current-biased Josephson junction in the vicinity of its return to the zero-voltage states, with primary though not exclusive emphasis on the limit of weak damping (βJ(very-much-less-than)1), and under the assumption that the zero-point and thermal energies are both small compared to Icφ0 so that fluctuation effects are important only very close to the return point. We consider in detail the resistively shunted junction (RSJ) and quasiparticle-tunneling models, and also make predictions for more general models. Denoting the value of imposed current I at which return to the zero-voltage state would take place in the absence of fluctuations by Ir, we study in particular (a) the dc current-voltage characteristic in the running state for I−Ir(very-much-less-than)Ir, and (b) the first-passage-time statistics of the return to the zero-voltage state induced by both classical and quantum fluctuations. With regard to (b), we express our results in the form of a prediction of the width σ of the distribution of retrapping events as a function of imposed current; this prediction extends down to zero temperature and can be compared directly with the experimentally measured widths.Our two principal results are as follows: (a) In the running state, for I(very-much-less-than)Ir, the current-voltage characteristic should be given quite generally by the formula (I−Ir)/Ir =[(AV0/V)+B]exp−V0/V, where A and B are constants specific to the model, and V0 is a characteristic voltage which for the simplest models is given in the weak-damping limit by V0=ωJφ0+0(β2J) , with ωJ the junction plasma resonance frequency at zero current bias. (b) The square σ2 of the width of the retrapping distribution plotted as a function of I/Ir is given to within logarithmic factors by σ2(T)=const μf(T), where μ≡(h-dash-bar)ωJ/Icφ0, the constant is of order 1, and f(T) is a function which tends to 1 as T→0 and is proportional to T in the limit of high T; it is computed explicitly for the RSJ model. We also suggest an explanation (other than lead effects) of the "forbidden voltage regions'' which appear to be a characteristic of many high-quality junctions. We discuss the application of our results to the determination of the parameters of Josephson junctions necessary for the investigation of quantum effects on the macroscopic level.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 24 (1985), S. 3158-3165 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3618-3621 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of InSb have been grown in InP and GaAs substrates by molecular-beam epitaxy. The dependence of the epilayer quality on flux ratio, JSb4/JIn , was studied. Deviation from an optimum value of JSb4/JIn (∼2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room-temperature electron mobilities as high as 70 000 and 53 000 cm2/V s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n type even at T=13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110 000 cm2/V s (3×1015 cm−3) and 55 000 cm2/V s (4.95×1015 cm−3), respectively, suggesting their application to electronic devices at cryogenic temperatures.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 19 (1987), S. S93 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The steady-state and transient properties of polarization-bistable semiconductor lasers are investigated, both experimentally and theoretically. An analysis based on coupled rate equations for a two-mode system with unequal gain/current characteristics is presented. The simple rate-equation model explains the general features of the observed bistable-switching behaviour. The condition for the existence of polarization bistability is determined using laser parameters.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Archive for rational mechanics and analysis 108 (1989), S. 1-9 
    ISSN: 1432-0673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Theoretical and applied genetics 78 (1989), S. 553-559 
    ISSN: 1432-2242
    Keywords: Kernel ; Seedling ; Starch biosynthesis ; Cell specific ; Gene expression
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary We describe the spatial and temporal immunohistological distributions of the two sucrose synthases, SS1 and SS2, encoded by the Sh and Sus genes, respectively, in different parts of the maize plant. The two similar isozymes were differentially localized in developing endosperm cells through the combined uses of a shrunken (sh) mutant lacking the SS1 protein and the SS1 and SS2 antisera. The accumulation of SS1 protein always coincided with starch deposition in the Sh endosperm cells, whereas in the sh endosperm, the centrally located cells were lost at or during the most critical phase of starch biosynthesis. The SS2 specific cells, including aleurone layer and the basal endosperm transfer cells in both genotypes, were not associated with detectable starch deposition. Such heterogeneity was indicative of two cell types separable by gene expression, and of differential in vivo roles of the two isozymes in the endosperm. In young roots, the expression of both SS encoding genes was predominantly in the vascular cylinder region. These data fulfill a previous prediction, based on the genetic analyses, that the expression of the SS genes is spatially and/or temporally separated in endosperm cells but not in root cells.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 35 (1989), S. 1148-1156 
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Large transient temperature excursions may be caused by a sudden reduction in the feed temperature to a packed-bed reactor operating at an intermediate conversion. When a unique steady state exists for all feed temperatures, the magnitude of the wrong-way behavior predicted by a two-phase model is very close to that predicted by a pseudohomogeneous model if PeH is equal to the dimensionless heat transfer coefficient H. The two-phase model enables a more efficient numerical simulation in such cases. The predictions of these two models may be rather different when steady-state multiplicity exists for some feed temperatures. In such cases, a two-phase model, which accounts for the axial dispersion of heat, should be used to simulate the transient behavior. The wrong-way behavior may lead to an ignition of a low-temperature state or an upstream propagation of a transient temperature wave.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
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