ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ion implantation is used to modify the local environment of the DX center in Si-doped Al0.27Ga0.73As grown by molecular beam epitaxy (MBE), and the variations in DX center properties with subsequent rapid thermal annealing processes are examined using deep level transient spectroscopy. In the as-grown sample, two DX center peaks are found with the same activation energy of 0.46±0.01 eV, but with widely different cross sections. The main DX center peak ME3, which appears at higher temperatures due to its smaller cross section, remains stable throughout the experiments. The second DX center peak ME2 has a much larger cross section, and appears at a lower temperature. The capture properties of this subsidiary DX center peak are markedly altered in the ion-implanted samples. Samples which were subject solely to the rapid thermal annealing processes have stable DX center trap signatures, indicating that arsenic loss during annealing does not significantly influence the DX center characteristics. It is proposed that regions of incomplete ordering and defect complexing in the AlGaAs film give rise to the various subsidiary DX center peaks observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100874
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