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  • 1
    Electronic Resource
    Electronic Resource
    High resolution x-ray diffraction analysis of Si/GaAs superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 95-102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction has been used to characterize Si/GaAs superlattices grown on GaAs substrates by molecular beam epitaxy. A typical superlattice structure consisted of ten periods of thin (〈5 A(ring)) layers of pseudomorphic silicon alternating with thick GaAs layers; typical GaAs thicknesses range from approximately 100 to 1850 A(ring). X-ray rocking curves showed sharp and intense satellite peaks (out to 22 orders in one case), indicating a high level of structural quality. Excellent agreement has been obtained between the observed diffraction patterns and those calculated via dynamical simulation. Structural models in which the silicon exists as 2.7 A(ring) bilayers with interfacial Si/GaAs alloy transition layers of either monolayer or bilayer thickness fully describes the observed diffraction patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353836
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  • 2
    Electronic Resource
    Electronic Resource
    Study of the DX center fine structure in ion-implanted Al0.27Ga0.73As processed by rapid thermal annealing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 727-729 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation is used to modify the local environment of the DX center in Si-doped Al0.27Ga0.73As grown by molecular beam epitaxy (MBE), and the variations in DX center properties with subsequent rapid thermal annealing processes are examined using deep level transient spectroscopy. In the as-grown sample, two DX center peaks are found with the same activation energy of 0.46±0.01 eV, but with widely different cross sections. The main DX center peak ME3, which appears at higher temperatures due to its smaller cross section, remains stable throughout the experiments. The second DX center peak ME2 has a much larger cross section, and appears at a lower temperature. The capture properties of this subsidiary DX center peak are markedly altered in the ion-implanted samples. Samples which were subject solely to the rapid thermal annealing processes have stable DX center trap signatures, indicating that arsenic loss during annealing does not significantly influence the DX center characteristics. It is proposed that regions of incomplete ordering and defect complexing in the AlGaAs film give rise to the various subsidiary DX center peaks observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100874
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  • 3
    Electronic Resource
    Electronic Resource
    Calculated electronic structure of GaAs/Ge2 (001) superlattices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 758-764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use the semiempirical tight binding method with an sp3s* basis and second-nearest-neighbor interactions to investigate the electronic structure of (GaAs)m/(Ge2)n (001) superlattices (SLs) with 1≤(m,n)≤20. We have found no correspondence between the calculated band structures of these (GaAs)/(Ge2) SLs and those for (GaAs)1−x(Ge2)x random alloys. The inclusion of second-nearest-neighbor, compared with the nearest-neighbor interactions, raised the SL band gap for (m,n)〉1, while lowering that for m=n=1. For the (GaAs)20/(Ge2)20 (001) SLs our calculation gives a band gap energy of 0.79 eV, while for (GaAs)1/(Ge2)1 the band gap energy is 0.11 eV. For small values of m, the (GaAs)m/(Ge2)n SLs are predicted to have indirect band gaps regardless of the valence band offset used in the calculation. For larger values of m, however, the predicted SL band gaps become direct for large values of valence band offset. For ΔEv=0.85 eV we find a direct to indirect band gap transition for m between 14 and 16. In the indirect-gap SLs, the electrons and holes are confined in the Ge layers, while the direct-gap SLs have holes confined in the Ge layers and electrons in the GaAs layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364137
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  • 4
    Electronic Resource
    Electronic Resource
    Electronic structure of (GaAs)m/(Ge2)n (001) superlattices with 1≤(m,n)≤20 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1942-1944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The semiempirical tight-binding method with second-nearest-neighbor interactions has been used to investigate the electronic structure of (GaAs)m/(Ge2)n (001) superlattices (SLs) with 1≤(m,n)≤20. We have found no correspondence between the calculated band structures of these (GaAs)/(Ge2) SLs and (GaAs)1−x(Ge2)x random alloys. The inclusion of second-nearest-neighbor interactions raised the predicted energies of the conduction band confined states while lowering that of the highest-lying interface state. For small values of m, the (GaAs)m/(Ge2)n SLs are predicted to have indirect band gaps regardless of the valence band offset used in the calculation. For larger values of m, however, the predicted SL band gaps become direct for large values of valence band offset. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115633
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of Si/GaAs superlattices by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 721-723 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and characterization of a ten period silicon/GaAs superlattice by molecular beam epitaxy is described. Reflection high energy electron diffraction of the surface reconstruction during growth of the GaAs layers showed the (4×2)→(3×2) →(3×1)→(2×4) sequence reported previously for GaAs grown on pseudomorphic silicon, although the intermediate stages were much more persistent than previously reported. X-ray diffraction revealed satellite peaks clearly visible out to the fourth order, indicating a high degree of structural perfection. Comparison of the experimental diffraction profile and that obtained using a dynamical diffraction simulation yielded average layer thicknesses of 440 and 2.7 A(ring) for the GaAs and silicon layers, respectively. Excellent agreement between the experimental and the simulated profiles was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107437
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  • 6
    Electronic Resource
    Electronic Resource
    Redistribution of epitaxial Si on (001) GaAs during overgrowth by GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2730-2732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine the stability of pseudomorphic submonolayer Si films embedded in (001) GaAs by molecular-beam epitaxy. Secondary ion-mass spectrometry depth profiling reveals the presence of 1019 Si-atoms/cm3 in the first 40 nm of the GaAs cap layer. The systematic investigation of samples having different cap thickness by Hall effect measurements and local vibrational mode Raman spectroscopy allows us to identify the site distribution of Si atoms in the cap layer and yields insight into the migration mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105898
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