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  • 1
    Electronic Resource
    Electronic Resource
    High resolution x-ray diffraction analysis of Si/GaAs superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 95-102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction has been used to characterize Si/GaAs superlattices grown on GaAs substrates by molecular beam epitaxy. A typical superlattice structure consisted of ten periods of thin (〈5 A(ring)) layers of pseudomorphic silicon alternating with thick GaAs layers; typical GaAs thicknesses range from approximately 100 to 1850 A(ring). X-ray rocking curves showed sharp and intense satellite peaks (out to 22 orders in one case), indicating a high level of structural quality. Excellent agreement has been obtained between the observed diffraction patterns and those calculated via dynamical simulation. Structural models in which the silicon exists as 2.7 A(ring) bilayers with interfacial Si/GaAs alloy transition layers of either monolayer or bilayer thickness fully describes the observed diffraction patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353836
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  • 2
    Electronic Resource
    Electronic Resource
    730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.73-μm-emitting, Al-free active-region, strained (Δa/a(approximate)1.4%) InGaAsP single-quantum-well diode lasers have been grown by low-pressure metal–organic chemical-vapor deposition. A broad waveguide laser design with In0.5(Ga0.5Al0.5)0.5P cladding layers is utilized to achieve a large effective transverse spot size (d/Γ=0.433 μm) and to minimize carrier leakage from the active region. Threshold current densities of 514 A/cm2 (100-μm-wide stripe, L=1 mm), external differential quantum efficiencies of 60%, and characteristic temperature coefficients for the threshold current, T0, and external differential quantum efficiency characteristic temperature, T1, have values of 72 and 153 K, respectively. Continuous wave output powers of 1.4 W are obtained from facet-coated (90%/10%) devices operating at 735 nm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120831
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  • 3
    Electronic Resource
    Electronic Resource
    High-performance, reliable, 730-nm-emitting Al-free active region diode lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2869-2871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compressively strained InGaAsP quantum well (QW) active (λ=732 nm) diode lasers achieve 2.9 W continuous wave (cw) power from facet-coated (4%/95%) 100-μm-wide apertures, with reliable operation demonstrated at 0.5 W cw power. A broad waveguide structure is used to obtain a large transverse spot size (d/Γ=0.433 μm), resulting in a low internal loss (αi∼2 cm−1) and narrow transverse far-field beam width (θ1/2=38°). Record-high characteristic temperatures for the threshold current and the differential quantum efficiency (T0=115 K and T1=285 K) are obtained by growing on misoriented substrates. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122613
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  • 4
    Electronic Resource
    Electronic Resource
    6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at λ=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In0.5Ga0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure have a threshold-current density, Jth, of 310 A/cm2 and relatively high values for the characteristic temperatures of the threshold current, T0 (135 K), and differential quantum efficiency, T1 (900 K). Lasers with 10%/90% coatings and a 100-μm-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 °C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, P¯COMD, is 17.4 MW/cm2; that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120628
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  • 5
    Electronic Resource
    Electronic Resource
    5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 172-174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High power, 0.81-μm-emitting, semiconductor diode lasers are used as pump sources for Nd:YAG solid-state lasers. Devices (1-mm-long) consisting of a InGaAsP/In0.5(Ga0.9Al0.1)0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure provide a threshold-current density, Jth, of 290 A/cm2 and a relatively high threshold-current characteristic temperature, T0 (140 K). Uncoated diode lasers (1.2-mm-long) have a maximum continuous wave output power of 5 W (both facets) at 20 °C. The internal power density at catastrophic optical mirror damage (COMD), P¯COMD, is determined to be 9.1 MW/cm2; that is, 1.8 times that for GaAs-active layer, Al-free, uncoated devices. Coated, InGaAsP-active devices are expected to have P¯COMD=18 MW/cm2, more than twice the P¯COMD of AlGaAs-active, 0.81-μm-emitting devices with the same emitting aperture. Therefore, 0.81-μm-emitting, InGaAsP-active diode lasers should operate reliably at powers at least twice those of AlGaAs-based devices with the same contact-stripe geometry. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119528
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  • 6
    Electronic Resource
    Electronic Resource
    High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 149-151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient, high-power, Al-free active-region diode lasers emitting at λ=0.83 μm have been grown by low-pressure metalorganic chemical vapor deposition. Threshold-current densities as low as 220 A/cm2, maximum continuous wave (cw) power of 4.6 W, and a maximum cw wallplug efficiency of 45% are achieved from 1 mm long, uncoated devices with In0.5(Ga0.5Al0.5)0.5P cladding layers. Further improvement is obtained by replacing the p-In0.5(Ga0.5Al0.5)0.5P cladding layer with thin (0.1 μm) electron-blocking layers of Al0.85Ga0.15As and In0.5(Ga0.5Al0.5)0.5P, and a p-In0.5(Ga0.9Al0.1)0.5P cladding layer. Such devices provide a record-high T0 of 160 K and reach catastrophic optical mirror damage (COMD) at a record-high cw power of 4.7 W (both facets). The corresponding COMD power-density level (8.7 MW/cm2)is ∼2 times the COMD power-density level for uncoated, 0.81-μm-emitting AlGaAs-active devices. Therefore, 0.81-μm-emitting, Al-free active-region devices are expected to operate reliably at roughly twice the power of AlGaAs-active region devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118343
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