Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 2869-2871
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Compressively strained InGaAsP quantum well (QW) active (λ=732 nm) diode lasers achieve 2.9 W continuous wave (cw) power from facet-coated (4%/95%) 100-μm-wide apertures, with reliable operation demonstrated at 0.5 W cw power. A broad waveguide structure is used to obtain a large transverse spot size (d/Γ=0.433 μm), resulting in a low internal loss (αi∼2 cm−1) and narrow transverse far-field beam width (θ1/2=38°). Record-high characteristic temperatures for the threshold current and the differential quantum efficiency (T0=115 K and T1=285 K) are obtained by growing on misoriented substrates. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122613
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