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  • 1985-1989  (2)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Interfacial work functions and extrinsic silicon infrared photocathodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1738-1740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that n+ and/or p+ contacts on p-i-n diodes can function as solid-state photoemitters at temperatures (approximately-less-than)20 K. Infrared radiation can excite electrons or holes over small n-i or p-i interfacial barriers and into the intrinsic region when the diode is forward biased. Photoelectric thresholds in the far infrared corresponding to 37 and 61 μm cutoffs have been observed for silicon devices using a Fourier transform spectrometer. Suggestions are made to tailor the cutoff wavelengths using different concentrations of various impurities near the metal-insulator transition. Epitaxially grown multilayered (superlattice) detectors are proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102203
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Below-band-gap photon recycling in AlxGa1−xAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 165-167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A long minority-carrier diffusion length and the transmission of Alx Ga1−x As luminescence through Alx Ga1−x As layers are identified as two processes causing the excitation of GaAs spectra through thick Alx Ga1−x As layers, as well as contributing to enhancements in low-temperature photoluminescence intensity observed in Alx Ga1−x As layers without GaAs substrates. A simple model for intensity enhancement due to below-band-gap photon recycling is introduced to explain the observed enhancements. Some features that uniquely distinguish below-band-gap photon recycling from the better known room-temperature process are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102131
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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