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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial work functions and extrinsic silicon infrared photocathodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1738-1740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that n+ and/or p+ contacts on p-i-n diodes can function as solid-state photoemitters at temperatures (approximately-less-than)20 K. Infrared radiation can excite electrons or holes over small n-i or p-i interfacial barriers and into the intrinsic region when the diode is forward biased. Photoelectric thresholds in the far infrared corresponding to 37 and 61 μm cutoffs have been observed for silicon devices using a Fourier transform spectrometer. Suggestions are made to tailor the cutoff wavelengths using different concentrations of various impurities near the metal-insulator transition. Epitaxially grown multilayered (superlattice) detectors are proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102203
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360862
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  • 3
    Electronic Resource
    Electronic Resource
    Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 328-331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional Hall-effect determination of the two-dimensional electron gas (2DEG) concentration n2D in pseudomorphic high electron mobility transistor structures is invalid because of interference from the highly doped GaAs cap. Furthermore, the usual methods of dealing with this cap-interference problem, namely, (1) etching off the cap totally, (2) etching the cap until the mobility reaches a maximum, or (3) growing a separate structure with a thin, depleted cap, in general, give n2D values that are too low. However, we show here that magnetic-field-dependent Hall (M-Hall) measurements can separately determine the carrier concentrations and mobilities in the cap and 2DEG regions, as verified by comparison with a self-consistent, four-band, k⋅p calculation and also by electrochemical capacitance-voltage measurements in structures with different cap and spacer thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357148
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence measurements from the two polar faces of ZnO (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3454-3457 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure of ZnO is wurtzite and the stacking sequence of atomic layers along the "c" axis is not symmetric. As a result, a ZnO crystal surface that is normal to the c axis exposes one of two distinct polar faces, with (0001¯) being considered the O face and (0001) the Zn face. Photoluminescence (PL) measurements on the two faces reveal a striking difference. Two transitions are observed in PL that are dominant from the O face and barely observed in PL from the Zn face. These lines are identified as phonon replicas of a particular D0,X transition using energy separations, excitation dependence, and time-resolved PL measurements. In addition, PL emission from free excitons is found to be more intense from the O face than from the Zn face. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288159
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Far infrared photoelectric thresholds of extrinsic semiconductor photocathodes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3168-3170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far infrared detection is demonstrated in forward biased Ge (out to 240 μm), Si (220 μm), and InGaAs (90 μm) p-i-n diodes with D up to 5×1010 cm Hz1/2/W at 4.2 K. For silicon detectors, this is the longest response wavelength ever reported. Estimates for the responsivity and the detectivity for unoptimized commercial samples are provided by comparison with a silicon composite bolometer. The variations observed in the long wavelength threshold (λt) suggest that if correlations with device processing parameters can be successfully established, this approach can be used to tailor detectors for different IR wavelength regions. Spectral response comparison with a single p-i structure strongly supports the detection mechanism and opens the possibility of detector optimization using multilayered structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106731
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    Paper (German National Licenses)
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