ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360862
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