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  • 1
    Electronic Resource
    Electronic Resource
    Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 594-596 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission and reflection spectra of GaN have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Three intrinsic exciton transitions have been observed, one associated with each of the valence bands. Exciton excited states associated with the two top valence bands were also observed. The exciton binding energies, the band-gap energies, and the exciton Bohr radii are all reported along with the dielectric constant and the spin-orbit and crystal-field parameters for GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362724
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  • 2
    Electronic Resource
    Electronic Resource
    Electron-irradiation-induced deep level in n-type GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 448-449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18 eV. The production rate is approximately 0.2 cm−1, lower than the rate of 1 cm−1 found for the N vacancy by Hall-effect studies. The defect trap cannot be firmly identified at this time. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120783
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  • 3
    Electronic Resource
    Electronic Resource
    Nondestructive mapping of carrier concentration and dislocation density in n+-type GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2188-2190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n+-GaAs wafers (n(approximately-equal-to)1–2×1018 cm−3) correlate well with carrier concentration n, measured by the Hall effect, and dislocation density, as confirmed by KOH etch-pit patterns. The absorption for λ(approximately-greater-than)1.0 μm (below band edge) varies directly with n via free-carrier interconduction-band transitions, while the absorption for λ(approximately-less-than)0.95 μm (near band edge) varies inversely with n because of band-filling effects. Both phenomena are highly useful for n+-GaAs wafer characterization. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112757
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  • 4
    Electronic Resource
    Electronic Resource
    Diamagnetic shifts of excitons associated with symmetric and antisymmetric wave functions in coupled InxGa1−xAs-GaAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2293-2295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical data obtained from photoluminescence and photoluminescence excitation measurements performed in the presence of applied magnetic fields were used to determine the diamagnetic shifts of free excitons. The samples studied were coupled InxGa1−xAs–GaAs quantum wells. In all cases the excitons associated with antisymmetric wave functions were found to have larger diamagnetic shifts than the excitons associated with symmetric wave functions. This suggests that the excitons associated with antisymmetric wave functions have a smaller binding energy than excitons associated with symmetric wave functions. These properties are consistent with the fact that excitons associated with antisymmetric wave functions are less confined than excitons associated with the symmetric wave functions. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112997
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360862
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  • 6
    Electronic Resource
    Electronic Resource
    Depletion width and capacitance transient formulas for deep traps of high concentration (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2848-2850 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We derive expressions for the depletion width and capacitance transient applicable to traps which may be deep and of high concentration. The new results are compared with those obtained from the commonly used formulas, and also from an exact analysis. Experimental deep level transient spectroscopic data for EL2 in GaAs are in good agreement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360086
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  • 7
    Electronic Resource
    Electronic Resource
    Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 328-331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional Hall-effect determination of the two-dimensional electron gas (2DEG) concentration n2D in pseudomorphic high electron mobility transistor structures is invalid because of interference from the highly doped GaAs cap. Furthermore, the usual methods of dealing with this cap-interference problem, namely, (1) etching off the cap totally, (2) etching the cap until the mobility reaches a maximum, or (3) growing a separate structure with a thin, depleted cap, in general, give n2D values that are too low. However, we show here that magnetic-field-dependent Hall (M-Hall) measurements can separately determine the carrier concentrations and mobilities in the cap and 2DEG regions, as verified by comparison with a self-consistent, four-band, k⋅p calculation and also by electrochemical capacitance-voltage measurements in structures with different cap and spacer thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357148
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  • 8
    Electronic Resource
    Electronic Resource
    Electron beam modification of GaAs surface potential: Measurement of Richardson constant (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1890-1893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface potential of GaAs is strongly modified in the presence of a high-energy electron beam due to the creation of electron-hole pairs in the depletion region and the subsequent drift of the holes to the surface where they neutralize surface states. This effect is modeled in terms of a parameter K=A*T2/Ib(dE/dz)η, where Ib is the beam current density, A* is the effective Richardson constant, dE/dz is the beam energy loss per unit length, and η−1 is the average energy required to create an electron-hole pair. For the sample studied here, an 0.25-μm layer with n(approximately-equal-to)3×1017 cm−3, we obtain a value K(approximately-equal-to)(7.5±0.8)×104 cm at T=296 K and Ib=0.33 μA/cm2, which gives A*(approximately-equal-to)0.44 A/cm2 K2. Although this value of A* is much lower than the theoretical estimate of 8 A/cm2 K2, it is in good agreement with other recent results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354798
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  • 9
    Electronic Resource
    Electronic Resource
    Analytical two-layer Hall analysis: Application to modulation-doped field-effect transistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 311-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The classical magnetic-field-dependent Hall coefficient and conductivity equations are inverted to give the mobilities μ1 and μ2 and carrier concentrations n1 (or p1) and n2 (or p2) in two degenerate bands. The two-band solution holds for arbitrary magnetic-field strength as long as quantum effects can be ignored (i.e., kT(approximately-greater-than)(h-dash-bar)eB/m*), and it is argued that the analysis can also be applied to two separate layers up to reasonable field strengths. The results are used to determine the two-dimensional electron gas mobility and carrier concentration in a modulation-doped field-effect transistor with a highly doped cap layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354109
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  • 10
    Electronic Resource
    Electronic Resource
    Deep-center hopping conduction in GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2960-2963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam-epitaxial GaN layers change from strongly conductive (ρ(approximately-equal-to)10−2 Ω cm at 300 K) to semi-insulating (ρ(approximately-equal-to)106 Ω cm) as the N flux is increased. Layers grown at low fluxes show strong n-type conduction, with transport in the conduction band at high temperatures and in a shallow donor band at low temperatures. For layers grown at high N fluxes, the Hall coefficients become too small to measure, suggesting hopping conduction among deep centers. The temperature-dependent resistivity data are most consistent with multiphonon, rather than single-phonon, hopping. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363128
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