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  • 1
    Electronic Resource
    Electronic Resource
    Transverse mode behavior in native-oxide-defined low threshold vertical-cavity lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1611-1613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented characterizing the transverse mode behavior of AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers fabricated using a native-oxide process. The native-oxide process results in laser diodes with active regions defined to be 10, 8, and 4 μm squares. We show that the transverse lasing mode is influenced by mirror reflectivity, with significant mode changes occurring with drive current for 8–10 μm devices in the ranges of one to four times threshold. In smaller devices of 4 μm square dimension, the transverse mode at threshold appears as a lowest order mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112927
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  • 2
    Electronic Resource
    Electronic Resource
    Native-oxide defined ring contact for low threshold vertical-cavity lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 97-99 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented characterizing a new process for fabrication of vertical-cavity surface-emitting lasers based on the selective conversion of high Al composition epitaxial AlGaAs to a stable native oxide using "wet oxidation.'' The native oxide is used to form a ring contact to the laser active region. The resulting laser active regions have dimensions of 8, 4, and 2 μm. The lowest threshold laser is achieved with the 8-μm active region, with a minimum threshold current of 225-μA continuous wave at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113087
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  • 3
    Electronic Resource
    Electronic Resource
    Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 328-331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional Hall-effect determination of the two-dimensional electron gas (2DEG) concentration n2D in pseudomorphic high electron mobility transistor structures is invalid because of interference from the highly doped GaAs cap. Furthermore, the usual methods of dealing with this cap-interference problem, namely, (1) etching off the cap totally, (2) etching the cap until the mobility reaches a maximum, or (3) growing a separate structure with a thin, depleted cap, in general, give n2D values that are too low. However, we show here that magnetic-field-dependent Hall (M-Hall) measurements can separately determine the carrier concentrations and mobilities in the cap and 2DEG regions, as verified by comparison with a self-consistent, four-band, k⋅p calculation and also by electrochemical capacitance-voltage measurements in structures with different cap and spacer thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357148
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence in modulation-doped pseudomorphic high electron mobility transistor AlxGa1−xAs/ InyGa1−yAs/GaAs structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7535-7540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature-dependent characteristics of photoluminescence emission in modulation δ-doped AlxGa1−xAs/InyGa1−yAs/GaAs structures. Transition energies are analyzed using a self-consistent solution of the coupled k⋅P Hamiltonian–Poisson equation. At low temperatures, dominant emissions are due to the transitions from the first electron subband to the first heavy-hole subband and from the second electron subband to the first heavy-hole subband irrespective of the location of modulation doping. The second hole subband related transitions associated with the first electron subband or the second electron subband emerges with increasing temperature depending on the location of doping. The relative intensities of the transitions from the first and second electron subbands to the first heavy-hole subband transitions are analyzed as a function of the Fermi energy position. An excellent agreement is found between the measurements and calculations. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357985
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of the transverse lasing mode in vertical-cavity lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2279-2286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data are presented along with calculations which describe the near-threshold transverse modes in AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers with two different Bragg reflector systems. The Bragg reflector systems are composed of either AlAs/GaAs quarter-wave stacks or a combination of AlAs/GaAs and ZnSe/CaF. The temperature dependence of the lasing mode is studied for three different structures, and it is shown that higher-order lasing modes are favored with strong cavity detuning when the cavity resonance exists at a wavelength greater than the bulk emission peak. Important aspects of the lasing behavior are described by calculating the spontaneous mode which occurs at the lasing wavelength. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358816
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  • 6
    Electronic Resource
    Electronic Resource
    ZnSe/CaF2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7430-7434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on an electron-beam evaporated ZnSe/CaF2 distributed Bragg reflector for use on a vertical-cavity surface-emitting laser operating at a wavelength ∼0.98 μm. Mirror characteristics are measured using optical transmission and reflectivity for quarter-wave structures with varying numbers of pairs from one to five. The optical characteristics of the ZnSe/CaF2 quarter-wave stack is compared to similar structures of electron-beam evaporated Si/SiO2 reflectors. The ZnSe/CaF2 mirror is found to be superior to the Si/SiO2 mirror in terms of both higher reflectivity and lower optical loss for all structures investigated. Comparison is also made between ZnSe/CaF2 and Si/SiO2 mirrors in the continuous-wave performance of AlAs-GaAs-InGaAs quantum-well vertical-cavity surface-emitting lasers. Superior laser performance is achieved with the ZnSe/CaF2 mirror in terms of threshold current and lasing efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347557
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  • 7
    Electronic Resource
    Electronic Resource
    First-order phase transition in a laser threshold (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3081-3083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mechanism for achieving a first-order phase transition in the threshold characteristics of a laser is discussed, and data demonstrating the effect are presented. It is suggested that a first-order phase transition can be realized through the design of a laser active region if the gain medium is localized to a spatial region with longitudinal dimensions much less than the wavelength of the resulting laser light. Evidence of the first-order phase transition is presented in the spontaneous emission characteristics of a microcavity semiconductor laser, which shows a decrease in the separation energy of the quasi-Fermi levels at threshold, along with hysteresis in the light versus current characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106758
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence linewidth in modulation-doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3263-3265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature dependent characteristics of photoluminescence linewidth in terms of two-dimensional electron gas sheet concentration for modulation δ-doped AlxGa1−xAs/InyGa1−yAs/GaAs structures. The electron concentration is obtained using a self-consistent solution of the coupled k⋅P Hamiltonian–Poisson equation. We find that only the full width at half maximum of the n=2 electron-subband-to-n=1 hole subband transition is useful for characterizing high electron density at T=2–300 K. The importance of hole localization for correlating the electron density with photoluminescence linewidth is discussed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112431
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  • 9
    Electronic Resource
    Electronic Resource
    Low threshold voltage continuous wave vertical-cavity surface-emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2027-2029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating a design and fabrication process for the realization of low-threshold, high-output vertical-cavity surface-emitting laser diodes with low series resistance. Lateral current confinement is achieved in the laser structures through the use of molecular-beam epitaxial regrowth over a 1000-A(ring)-thick patterned layer of low growth temperature AlGaAs incorporated into the p-type top mirror. A maximum cw output power in excess of 5.7 mW, at 300 K is demonstrated for 15-μm-diam devices. With increased top mirror reflectivity (through the addition of dielectric layers), the low series resistance of the design results in a bias voltage of only 1.8 V at a threshold current of 1.9 mA for 10-μm-diam devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109494
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  • 10
    Electronic Resource
    Electronic Resource
    Bistability in an AlAs-GaAs-InGaAs vertical-cavity surface-emitting laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating bistability in the current versus voltage and light versus current characteristics of a quantum well vertical-cavity surface-emitting laser. The laser structures are grown using molecular beam epitaxy, and use an AlAs/GaAs Bragg reflector for the n-side mirror, and a combination of AlAs/GaAs and either ZnSe/CaF2 or Si/SiO2 quarter-wave dielectric layers for the p-side mirror. Regrowth of molecular beam epitaxial layers is used for current funneling into the device active region. Light emission is measured from the epitaxial side of the device, and threshold currents range from 2 to 4 mA. The bistability stems from switching in a parasitic pnpn structure triggered by lasing in the vertical-cavity laser, with the observed hysteresis width influenced by leakage current around the device active region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104811
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