ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the temperature-dependent characteristics of photoluminescence emission in modulation δ-doped AlxGa1−xAs/InyGa1−yAs/GaAs structures. Transition energies are analyzed using a self-consistent solution of the coupled k⋅P Hamiltonian–Poisson equation. At low temperatures, dominant emissions are due to the transitions from the first electron subband to the first heavy-hole subband and from the second electron subband to the first heavy-hole subband irrespective of the location of modulation doping. The second hole subband related transitions associated with the first electron subband or the second electron subband emerges with increasing temperature depending on the location of doping. The relative intensities of the transitions from the first and second electron subbands to the first heavy-hole subband transitions are analyzed as a function of the Fermi energy position. An excellent agreement is found between the measurements and calculations. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357985
