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  • 1
    Electronic Resource
    Electronic Resource
    Analytical two-layer Hall analysis: Application to modulation-doped field-effect transistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 311-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The classical magnetic-field-dependent Hall coefficient and conductivity equations are inverted to give the mobilities μ1 and μ2 and carrier concentrations n1 (or p1) and n2 (or p2) in two degenerate bands. The two-band solution holds for arbitrary magnetic-field strength as long as quantum effects can be ignored (i.e., kT(approximately-greater-than)(h-dash-bar)eB/m*), and it is argued that the analysis can also be applied to two separate layers up to reasonable field strengths. The results are used to determine the two-dimensional electron gas mobility and carrier concentration in a modulation-doped field-effect transistor with a highly doped cap layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354109
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Parametric study of AlAs/GaAs superlattice double-barrier diodes (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 207-209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100132
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electron density in quantum well diodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3126-3130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent calculation of the electron density and conduction-band edge is presented. The time-independent Schrödinger and Poisson equations are solved simultaneously under a high applied bias for structures with thick, lightly doped spacer layers. It is shown that strongly localized states occur in the well and accumulation regions. These states are capable of trapping a substantial amount of charge, which in turn can drastically change the shape of the band edge, and therefore need to be included in studies of the resonant tunneling problem in which the Coulomb interaction must be accounted for.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344147
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4765-4767 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical barrier height measurements on n+-GaAs–insulator–n-GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341194
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  • 5
    Electronic Resource
    Electronic Resource
    Charge-quantization effects on current-voltage characteristics of AlGaAs/GaAs resonant tunneling diodes with spacer layers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3425-3430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An inflection has been observed in the current-voltage characteristics of several AlGaAs/GaAs resonant tunneling diodes with spacer layers. We provide evidence linking this inflection, as well as the negative differential resistance, to quasi-bound energy states localized in the charge accumulation well between the emitter spacer layer and the AlGaAs barrier. There are strong indications that this region acts as the injector of electrons through the quantum well region. We propose a model for the electron transport, and show that the singularities in the current are caused by the quantum well state crossing the accumulation layer quasi-bound states as the bias is ramped.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346349
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 121-123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a "two-step'' spacer layer incorporated in the devices studied which facilitated the growth of high material quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98588
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    Paper (German National Licenses)
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