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  • 1
    Electronic Resource
    Electronic Resource
    Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360862
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  • 2
    Electronic Resource
    Electronic Resource
    Beryllium ion implantation in GaAsSb epilayers on InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 699-709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium ion implantation was used to form high acceptor concentrations in GaAs1−xSbx (0.47≤x≤0.49) epilayers on semi-insulating InP substrates. Two implant doses were tested: Q0=5×1014 cm−2 and Q0=1×1015 cm−2 at an implant energy of E=50 keV. Electrochemical profiling and secondary-ion-mass spectrometry (SIMS) results confirm acceptor concentrations of NA≥1×1019 cm−3 and NA≥2×1019 cm−3 within 1000 A(ring) of the GaAs1−xSbx surface for the lower and higher implant dose, respectively. These results provide a p+ surface layer for low-resistance ohmic contact to GaAsSb-based devices. Optical microscopy and SIMS demonstrate rapid thermal anneal (RTA) temperature limits of T=650 °C for Q0=5×1014 cm−2 and T=600 °C for Q0=1 ×1015 cm−2. The temperature limitation is imposed by destabilization of the GaAs1−xSbx surface through Ga sputtering during implantation, and Ga and As outdiffusion during RTA. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360814
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  • 3
    Electronic Resource
    Electronic Resource
    Moving photoluminescence bands in GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 504-508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the excitation intensity dependent photoluminescence properties of GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates. Photoluminescence consists of the bound exciton and the quasi-donor-acceptor pair transitions for the layers in the range of 0.26≤x≤0.94. The concentration modulation produced by the relaxation of the misfit strain between the epitaxial GaAs1−xSbx layer and InP substrate is responsible for the quasi-donor-acceptor pair transition. A large Stokes shift between the photoluminescence transition of the bound exciton and the band gap determined by the optical absorption measurements is also consistent with our model of concentration modulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357102
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  • 4
    Electronic Resource
    Electronic Resource
    Low-energy ion-assisted epitaxy of InGaAsSb on InP (100) (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7904-7906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsSb alloys were grown within the solid-phase miscibility gap, lattice matched to InP (100) substrates, using ion-assisted deposition. The alloy structure and properties were strongly dependent upon the energy E of Ar ions bombarding the growing film. Films deposited with E≤16 eV exhibited multiple (400) x-ray diffraction peaks and relatively low electron mobilities, indicating that there was significant alloy decomposition. Increasing E to 19–21 eV yielded single, sharp (400) x-ray peaks and increased the electron mobility, showing that ion irradiation suppressed decomposition. E(approximately-greater-than)22 eV resulted in ion damage as indicated by decreased mobilities and broadening of the x-ray peaks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347477
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  • 5
    Electronic Resource
    Electronic Resource
    High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 406-408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optically pumped semiconductor lasers emitting near 3.8 μm that exhibit high power and low output divergence. The lasers incorporate multiple InAs/InGaSb/InAs type-II wells imbedded in an InGaAsSb waveguide that is designed to absorb the pump emission. When operated at 85 K, 0.25 mm×2.5 mm broad area devices produce 〉5 W of peak power under long pulse conditions. Moreover, these extremely bright devices exhibit a fast axis divergence of only ∼15° full width at half maximum (FWHM), coupled with a slow axis divergence of ∼6° FWHM. The first is due to the reduced optical confinement in the transverse direction, while the latter is attributed to the suppression of filament formation, which is another beneficial consequence of the low optical confinement. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493227
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  • 6
    Electronic Resource
    Electronic Resource
    Optically pumped integrated absorber 3.4 μm laser with InAs-to-InGaAsSb type-II transition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 302-304 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report optically pumped lasing at λ∼3.4 μm from an integrated absorber structure in which the electrons confined in the InAs quantum wells recombine with holes in adjacent InGaAsSb layers to provide the gain. This type-II laser exhibits an estimated photon-to-photon conversion rate of ∼24% at 85 K. The self-consistent empirical pseudopotential method calculations suggest that Coulomb attraction can lead to a strong enhancement in carrier overlap, and the resulting small shift in transition energy is consistent with that observed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385581
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  • 7
    Electronic Resource
    Electronic Resource
    Improved compositional abruptness at the InGaAs on GaAs interface by presaturation with In during molecular-beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 819-821 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface segregation of In atoms during molecular beam epitaxy of InGaAs layers greatly influences the composition profile in the vicinity of both the normal and the inverted Ga(Al)As/InGaAs interface, inherently limiting compositional abruptness. We find, for example, that the intended alloy composition in In0.22Ga0.78As is not reached until nearly 35 A(ring) from the InGaAs on GaAs interface for growth at 500 °C. We propose and demonstrate how the compositionally graded region in InGaAs can be eliminated by preadsorbing a fixed amount of In onto the GaAs surface to match the surface segregated layer during steady state, before depositing the InGaAs layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115454
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1024-1026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells with Shubnikov–de Haas measurements. The saturated reduction of the electron density in the InAs well was about 10%. The electron effective mass was found to be (0.048±0.004) m0 for an electron density of 18.0×1011 cm−2. The electron quantum lifetime decreased as the electron density was reduced by the negative persistent photoconductivity effect due to electron-hole interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112141
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  • 9
    Electronic Resource
    Electronic Resource
    Phonon replicas in the photoluminescence emission of AlxGa1−xAs alloys (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3447-3449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phonon replicas in the photoluminescence spectra of a direct gap AlxGa1−xAs alloy have been observed. The GaAs-like transverse optical and longitudinal optical as well as AlAs-like longitudinal optical modes were observed at the Γ-point. We also observe what we believe to be the longitudinal acoustical phonons at the L-point in the Brillouin zone. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113383
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations
    Amsterdam : Elsevier
    Surface Science Letters 241 (1991), S. A6 
    Details
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0167-2584(91)91063-3
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